WSE3088

WSE3088 N-Ch MOSFET Product Summery General Description The WSE3088 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 30V RDSON ID 23mΩ 7A Applications The WSE3088 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-89 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 7.0 A 1 5.5 A 28 A 9 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy IAS Avalanche Current 6 A W PD@TA=25℃ Total Power Dissipation 1.8 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 --- Max. 70 Unit ℃/W --- 30 ℃/W Dec.2014 WSE3088 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ --- 23 28 --- 31 38 0.5 1.0 1.5 V --- -4.2 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=7A VGS=2.5V , ID=6A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5.0 Ω Qg Total Gate Charge (4.5V) --- 8.0 10.5 --- 0.7 --- --- 1.5 --7.5 Qgs Qgd VDS=10V , VGS=4.5V , ID=7A Gate-Source Charge Gate-Drain Charge uA nC --- 4 Rise Time VDD=10V ,VGS=10V, --- 12.5 23 Turn-Off Delay Time RG=6Ω,ID=1A ,RL=10Ω, --- 13.5 25 Fall Time --- 2 3.5 Ciss Input Capacitance --- 360 --- Coss Output Capacitance --- 80 --- Crss Reverse Transfer Capacitance --- 55 --- Min. Typ. Max. Unit 7 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=6A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=3A , TJ=25℃ IF=7A , dI/dt=100A/µs , TJ=25℃ --- --- 2 A --- --- 28 A --- --- 1.3 V --- 8.5 --- nS --- 2.5 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=6A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSE3088 N-Ch MOSFET Typical Characteristics 65 25 ID=7A VGS=10V 20 ID Drain Current (A) VGS=7V 50 RDSON (mΩ) VGS=5V 15 VGS=4.5V VGS=3V 10 35 5 18 0 0 0.5 1 1.5 2 2 2.5 4 VDS , Drain-to-Source Voltage (V) 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 T ypical Output Characteristics 6 IS Source Current(A) VDS=4.5V ID=7A 4 TJ=150℃ 2 0 0.00 0.25 0.50 TJ=25℃ 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 150 Dec.2014 WSE3088 N-Ch MOSFET 1000 100.00 F=1.0MHz 100us 10.00 100 1ms 10ms ID (A) Capacitance (pF) Ciss Coss 1.00 100ms Crss 0.10 o TA=25 C Single Pulse 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) 0.01 0.01 Fig.7 Capacitance DC 0.1 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TA+P DMXRθJA SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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