WSE3099

WSE3099 P-Ch MOSFET General Description Product Summery The WSP3099 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON -30V 53mΩ ID -5.0A Applications The WSP3099 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-89 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -5.0 A 1 -4.0 A -20 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 18 mJ IAS Avalanche Current 8 A Total Power Dissipation 1.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ 4 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 62.5 30 ℃/W --- ℃/W Dec.2014 WSE3099 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ VGS=-10V , ID=-5.0A --- 53 65 --- 80 98 -1.0 -1.5 -2.0 V --- 4.32 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-3.8A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 5.5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 48 Ω Qg Total Gate Charge (-4.5V) --- 11.6 --- Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge --- 2.5 --- VDS=-15V , VGS=-4.5V , ID=-5A uA nC --- 6 12 Rise Time VDD=-15V,VGEN=-10V,RG=3.3Ω --- 12 23 Turn-Off Delay Time ID=-1A ,RL=15Ω --- 25 46 Fall Time --- 6 12 Ciss Input Capacitance --- 625 --- Coss Output Capacitance --- 100 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit 6 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=6A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1.7A , TJ=25℃ --- --- -2.0 A --- --- -20 A --- --- -1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t