WSF12N10

WSF12N10 N-Ch MOSFET Product Summery General Description The WSF12N10 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 175mΩ 12A Applications The WSF12N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Load Switch Features TO-252 Pin Configuration z Advanced high cell density Trench technology D z Super Low Gate Charge z Excellent Cdv/dt effect decline G z Green Device Available S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 10 A 1 7 A 15 A Single Pulse Avalanche Energy 15 mJ A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 6 PD@TC=25℃ Total Power Dissipation3 60 W PD@TC=100℃ Total Power Dissipation3 30 W TSTG Storage Temperature Range -55 to 170 ℃ TJ Operating Junction Temperature Range -55 to 170 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 50 ℃/W --- 2.5 ℃/W Dec.2014 WSF12N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=5A --- 175 220 mΩ --- 220 310 mΩ 1.0 1.8 2.4 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA VGS=4.5V , ID=2A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 13 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) 6.0 9.5 13 Qgs Qgd Td(on) 1.9 2.5 Gate-Drain Charge 1.0 2.1 3.1 Turn-On Delay Time --- 11 21 VDS=50V , VGS=10V , ID=5A Gate-Source Charge 1.3 Rise Time VDD=30V , VGS=10V , RG=6Ω --- 10 19 Turn-Off Delay Time ID=1A , RL=30Ω --- 21 39 Fall Time --- 13 24 Ciss Input Capacitance --- 440 --- Coss Output Capacitance --- Tr Td(off) Tf Crss VDS=30V , VGS=0V , f=1MHz Reverse Transfer Capacitance uA nC ns 36 --- --- 20 --- Min. Typ. Max. Unit 10 --- --- mJ Min. Typ. Max. Unit --- --- 3 A --- --- 9 A --- --- 1.1 V 25 36 47 nS 34 49 64 nC pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=3A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=3A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=3A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSF12N10 N-Ch MOSFET Typical Characteristics Power Dissipation Drain Current 70 12 60 10 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 8 6 4 2 10 o 0 o TC=25 C 0 20 40 0 60 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 40 Tj - Junction Temperature (°C) 80 100 120 140 160 180 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 10 Rd s(o n) Lim it 1ms 10ms 100ms 1s 1 DC 0.1 O TC=25 C 0.01 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance 50 ID - Drain Current (A) 60 500 VDS - Drain - Source Voltage (V) www.winsok.tw 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 0.01 1E-4 Mounted on 1in pad o RqJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WSF12N10 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance Output Characteristics 400 15 5V ID - Drain Current (A) 12 9 4.5V 6 3 0 4V 350 VGS=4.5V 300 250 200 VGS=10V 150 100 50 3.5V 0 1 2 3 4 0 3 6 9 12 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=5A Normalized Threshold Voltage 350 300 250 200 150 100 50 0 5 VDS - Drain - Source Voltage (V) 400 RDS(ON) - On - Resistance (mW) RDS(ON) - On - Resistance (mW) VGS=6,7,8,9,10V 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.winsok.tw IDS=250mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 15 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSF12N10 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 3.0 10 VGS = 10V IDS = 5A IS - Source Current (A) Normalized On Resistance 2.5 2.0 1.5 1.0 o Tj=175 C 1 o Tj=25 C 0.5 o 0.0 -50 -25 RON@Tj=25 C: 135mW 0 25 50 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz 550 VDS=50V 9 VGS - Gate-source Voltage (V) 500 Ciss 450 C - Capacitance (pF) 0.2 Tj - Junction Temperature (°C) 600 400 350 300 250 200 150 100 Crss 0 8 16 24 32 8 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw IDS=5A 1 Coss 50 0 0.1 0.0 75 100 125 150 175 0 2 4 6 8 10 QG - Gate Charge (nC) Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.