WSF28N06

WSF28N06 N-Ch MOSFET General Description Product Summery The WSF28N06 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 28mΩ 28A Applications The WSF28N06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDP ±20 V 1 28 A 1 17 A 96 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 22 mJ IAS Avalanche Current 28 A 4 60 W 4 PD@TC=25℃ Total Power Dissipation PD@Tc=100℃ Total Power Dissipation 30 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 --- Max. 50 Unit ℃/W --- 2.5 ℃/W Dec.2014 WSF28N06 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=12A --- 28 40 VGS=5.0V , ID=11A --- 38 50 mΩ 1.0 2.0 3.0 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 33 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) --- 12 36 Qgs Gate-Source Charge --- 3.0 5.2 Qgd Gate-Drain Charge --- 3.2 4.5 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Td(on) Tr Td(off) Tf VGS=VDS , ID =250uA VDS=30V , VGS=10V , ID=12A uA nC --- 8.9 16 Rise Time VDD=30V, RL=30Ω , IDS=1A, --- 8 15 Turn-Off Delay Time VGEN=10V, RG=6Ω --- 28 51 --- 22 41 --- 830 --- --- 85 --- --- 64 --- Min. Typ. Max. Unit --- --- 12 A --- --- 70 A --- 1.3 V Turn-On Delay Time Fall Time VGS=0V, VDS=30V, Frequency=1.0MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=12A , TJ=25℃ IF=1A ,dI/dt=100A/µs,TJ=25℃ ----- 30 --- nS --- 35 --- nC Note a： Pulse test ; pulse width≤300 µs, duty cycle≤2%. Note b：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WSF28N06 N-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 70 30 60 25 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 20 15 10 5 10 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 o 60 80 100 120 140 160 180 o Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance 500 Lim it (o n) Rd s 300us 10 1ms 10ms 100ms 1s 1 DC Normalized Effective Transient 2 100 ID - Drain Current (A) 40 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 Mounted on 1in pad o RθJA :50 C/W o TC=25 C 0.1 0.01 0.1 1 10 0.01 1E-4 100 300 VDS - Drain-Source Voltage (V) www.winsok.tw 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WSF28N06 N-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 30 ID - Drain Current (A) 25 RDS(ON) - On Resistance (mΩ) 70 VGS=4.5,5,6,7,8,9,10V 4V 20 15 3.5V 10 5 60 50 VGS=5V 40 VGS=10V 30 20 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 10 3.0 10 15 20 25 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=12A 90 30 IDS=250µA 1.4 Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) 5 VDS - Drain-Source Voltage (V) 100 80 70 60 50 40 30 20 0 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 175 o VGS - Gate-Source Voltage (V) www.winsok.tw 1.2 Tj - Junction Temperature ( C) Page 4 Dec.2014 WSF28N06 N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance 3.0 30 VGS = 10V IDS = 12A 2.5 10 IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 2.0 1.5 1.0 o Tj=150 C o Tj=25 C 1 0.5 o 0.0 -50 -25 RON@Tj=25 C: 32mΩ 0 25 50 0.1 0.0 75 100 125 150 175 o 10 560 8 VGS - Gate-Source Voltage (V) C - Capacitance (pF) 1.0 1.2 Gate Charge 9 Ciss 480 400 320 240 160 Coss Crss 5 1.4 VDS= 30V IDS= 12A 7 6 5 4 3 2 1 10 15 20 25 30 35 0 40 VDS - Drain-Source Voltage (V) www.winsok.tw 0.8 Capacitance Frequency=1MHz 0 0.6 VSD - Source-Drain Voltage (V) 640 0 0.4 Tj - Junction Temperature ( C) 720 80 0.2 0 2 4 6 8 10 12 QG - Gate Charge (nC) Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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