WSF30100

WSF30100 N-Ch MOSFET General Description Product Summery The WSF30100 is the highest performance trench N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF30100 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 2.5mΩ 100A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Power Tool Application Features TO-252 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1,7 100 A 1,7 80 A 310 A 378 mJ 70.2 A 89.3 W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 2 Pulsed Drain Current EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 62 --- 1.4 ℃/W ℃/W Dec.2014 WSF30100 N-Ch MOSFET Electrical Characteristics (TJ=25°C, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage = VGS=0V , ID 250uA Typ. 30--- Max. --- --- 0.022 --- VGS=10V , ID=20A --- 2.5 3 3.2 4 = VGS=10V , ID 15A --- Unit V Reference to 25℃ , ID=1mA V/℃ mΩ 1 1.5 2.5 V --- -6.1 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 2 VDS=24V , VGS=0V , TJ=55℃ --- --- 10 VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Min. uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forwar Trd VDS=5V= , ID 30A --- 60 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.9 1.8 Ω Qg Total Gate Charge (4.5V) --- 56.9 --- Qgs Gate-Source Charge --- 13.8 --- Qgd Gate-Drain Charge --- 23.5 --- Td(on) Tr Td(off) ansconductance VDS=15V , VGS=10V , ID=20A Turn-On Delay Time --- 20.1 --- Rise Time VDD=15V , VGS=10V , --- 6.3 --- Turn-Off Dela Ty ime RG=3.3Ω, ID=1A --- 124.6 --- nC ns Tf TFall ime --- 15.8 --- Ciss Input Capacitance --- 5935 --- Coss Output Capacitance --- 725 --- Crss Reverse Transfer Capacitance --- 538 --- Min. Typ. Max. Unit 69 --- --- mJ Min. Typ. Max. Unit --- --- 40 A --- --- 310 A --- --- 1.2 V VDS=15V , VGS=0V , f=1MHz pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current Pulsed Source Current2,6 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t