WSF3040

WSF3040 N-Ch MOSFET General Description Product Summery The WSF3040 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 10mΩ 43A Applications The WSF3040 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 43 A 1 30 A 1 11 A 1 9 A 112 A 53 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy IAS Avalanche Current 22 A PD@TC=25℃ Total Power Dissipation4 37.5 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 62 ℃/W --- 4 ℃/W Dec.2014 WSF3040 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.0193 --- V/℃ VGS=10V , ID=30A --- 10 12 VGS=4.5V , ID=15A --- 15 18 1.2 1.5 2.5 V --- -3.97 --- mV/℃ VGS=VDS , ID =250uA mΩ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.6 Ω Qg Total Gate Charge (4.5V) --- 9.8 13.7 Qgs Gate-Source Charge --- 4.2 5.88 Qgd Gate-Drain Charge --- 3.6 5.0 Turn-On Delay Time --- 5 8.0 Td(on) VDS=15V , VGS=4.5V , ID=15A uA nC Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 8 14 Turn-Off Delay Time ID=15A --- 31 62 Fall Time --- 4 8 Ciss Input Capacitance --- 940 --- Coss Output Capacitance --- 131 --- Crss Reverse Transfer Capacitance --- 109 --- Min. Typ. Max. Unit 24.6 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃ --- --- 15 A --- --- 112 A --- --- 1 V --- 8.5 --- nS --- 2.2 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t