WSF40N10A

WSF40N10A N-Ch MOSFET General Description Product Summery The WSF40N10A is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 42mΩ 31A Applications The WSF40N10A meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ ±20 V 1 31 A 1 22 A 55 A 52.1 W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 4 Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 62 ℃/W --- 2.4 ℃/W Dec.2014 WSF40N10A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=12A --- 42 55 --- 58 85 0.9 1.5 2.5 V --- -5.52 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=250uA VGS=5.0V , ID=8A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=12A --- 14 --- S Qg Total Gate Charge (10V) --- 13.5 22 Qgs Gate-Source Charge --- 3 --- Qgd Gate-Drain Charge VDS=80V , VGS=10V , ID=12A --- 9 ---- uA nC --- 6.5 Rise Time VDD=50V , VGS=10V , --- 18 --- Turn-Off Delay Time RG=3.3Ω ID=12A --- 20 --- Fall Time --- 5 --- Ciss Input Capacitance --- 3840 --- Coss Output Capacitance --- 115 --- Crss Reverse Transfer Capacitance --- 80 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 12 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.3 V --- 40 --- nS --- 70 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF=12A,dI/dt=100A/µs,TJ=25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.winsok.tw Page 2 Dec.2014 WSF40N10A N-Ch MOSFET Typical Characteristics 50 40 10V 7.0V 6.0V 5.0V ID , Drain Current (A) 40 10V 7.0V 6.0V 5.0V T C = 150 o C ID , Drain Current (A) T C = 25 o C 30 V G = 4.0V 20 30 V G = 4.0V 20 10 10 0 0 0 2 4 6 0 4 V DS , Drain-to-Source Voltage (V) 8 12 16 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.4 I D =8A I D =12A V G =10V o T C =25 C Normalized RDS(ON) RDS(ON) (mΩ) 2.0 60 1.6 1.2 50 0.8 0.4 40 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 20 I D =1mA Normalized VGS(th) IS(A) 16 12 T j =150 o C T j =25 o C 8 1.2 0.8 0.4 4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -50 1.4 V SD , Source-to-Drain Voltage (V) 50 100 150 o T j ,Junction Temperature ( C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode www.winsok.tw 0 Page 3 Dec.2014 WSF40N10A N-Ch MOSFET f=1.0MHz 10 1200 I D = 12 A V DS = 50 V V DS = 60 V V DS = 80 V 6 C iss 800 C (pF) VGS , Gate to Source Voltage (V) 1000 8 600 4 400 2 200 0 C oss C rss 0 0 4 8 12 16 20 24 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 Operation O peration in limited by RDS(ON) 100us ID (A) 10 1ms 10ms 1 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 1000 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Fig 11. Switching Time Waveform www.winsok.tw Q Fig 12. Gate Charge Waveform Page 4 Dec.2014 WSF40N10A N-Ch MOSFET TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V www.winsok.tw 5.350 TYP. 0.211 TYP. Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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