WSF40P04

WSF40P04 P-Ch MOSFET General Description Product Summery The WSF40P04 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -40V 32mΩ -20A Applications The WSF40P04 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252-3L(D-PAK) Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ V -20 A 1 -16 A -28 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 2 IDM Pulsed Drain Current IAR Avalanche Current -22 A EAR Repetitive avalanche energy L=0.1mH 28 mJ EAS Single pulse avalanche energy L=0.3mH 55 mJ 45 W Total Power Dissipation 20 W A 2.1 W A 1.5 W -55 to 175 ℃ PD@TC=25℃ PD@TC=100℃ PD@TA=25℃ PD@TA=70℃ TJ ±20 1 TSTG 4 Total Power Dissipation 4 Power Dissipation Power Dissipation Junction and Storage Temperature Range Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Typ. Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 --- Max. 50 Unit ℃/W --- 25 ℃/W --- 2.5 ℃/W Dec.2014 WSF40P04 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- --- V/℃ 42 VGS=-10V , ID=-12A --- -0.0232 32 VGS=-4.5V , ID=-8A --- 52 58 mΩ -2 -3 V --- 4.6 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- -1 VDS=-32V , VGS=0V , TJ=55℃ --- --- -5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-12A --- 10 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 6.0 --- Ω Qg Total Gate Charge (-4.5V) --- 20 --- Qgs Gate-Source Charge --- 2.5 --- Qgd Gate-Drain Charge --- 4.5 --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS VGS=VDS , ID =-250uA VDS=-20V , VGS=-10V , ID=-15A -1 uA nC --- 5 --- Rise Time VDD=-20V , VGS=-10V , --- 12 --- Turn-Off Delay Time RG=1.6Ω --- 20 --- Fall Time --- 4.5 --- Ciss Input Capacitance --- 840 --- Coss Output Capacitance --- 92 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit --- --- -10 A --- --- -20 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-12A,dI/dt=100A/µs, ----- --- -1 V 20 --- nS 16 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t