WSF45P06

WSF45P06 P-Ch MOSFET Product Summery General Description The WSF45P06 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -60V 40mΩ -45A Applications The WSF45P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z CCFL Back-light Inverter z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -60 V Gate-Source Voltage ±20 V 1 -45 A 1 -38 A -90 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 66 mJ IAS Avalanche Current -27.2 A 4 PD@TC=25℃ Total Power Dissipation 31.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 62 ℃/W --- 4 ℃/W Dec.2014 WSF45P06 P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-18A --- 30 40 VGS=-4.5V , ID=-12A --- 52 65 -1.0 -1.6 -2.5 V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-18A --- 12.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 16 Ω Qg Total Gate Charge (-4.5V) --- 4.1 --- Qgs Gate-Source Charge --- 4.9 --- Qgd Gate-Drain Charge --- 5.6 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-12A --- 19.2 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 12.8 --- Turn-Off Delay Time ID=-1A --- 48.6 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 1914 --- Coss Output Capacitance --- 158 --- Crss Reverse Transfer Capacitance --- 116 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time nC VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -23 A --- --- -46 A --- --- -1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t