WSF70N10
N-Ch MOSFET
General Description
Product Summery
The WSF70N10 is the highest performance
trench N-Ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
BVDSS
RDSON
100V
ID
10mΩ
70A
Applications
The WSF70N10 meet the RoHS and Green
Product requirement,100% EAS guaranteed
with full function reliability approved.
z Power Management in TV Converter.
Features
z LED TV Back Light
z Advanced high cell density Trench technology
TO-252 Pin Configuration
z DC-DC Converter
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±25
V
ID@TC=25℃
1
Continuous Drain Current, VGS @ 10V
70
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
35
A
1
8.2
A
1
6.6
A
150
A
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
2,
Pulsed Drain Current TC=25°C
EAS
Avalanche Energy, Single pulse,L=0.5mH
169
mJ
IAS
Avalanche Current, Single pulse,L=0.5mH
PD@TC=25℃
26
A
4
113
W
4
Total Power Dissipation
PD@TC=100℃
Total Power Dissipation
45
W
TSTG
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
150
℃
TJ
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
Thermal Resistance Junction-Case1
www.winsok.tw
Page 1
1
Max.
Unit
---
50
℃/W
---
1.1
℃/W
Dec.2014
WSF70N10
N-Ch MOSFET
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
△BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
2
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
△VGS(th)
VGS=10V , ID=30A
VGS=VDS , ID =250uA
VGS(th) Temperature Coefficient
Min.
Typ.
Max.
Unit
100
---
---
V
---
0.096
---
V/℃
---
10
13
mΩ
2.0
3.0
4.0
V
mV/℃
---
-5.5
---
VDS=80V , VGS=0V , TJ=25℃
---
---
1
VDS=80V , VGS=0V , TJ=55℃
---
---
5
uA
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
27
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.0
1.8
Ω
Qg
Total Gate Charge (10V)
---
42
---
Qgs
Gate-Source Charge
---
12
---
---
12
---
---
19
---
Qgd
Td(on)
VDS=80V , VGS=10V , ID=30A
Gate-Drain Charge
Turn-On Delay Time
nC
Rise Time
VDD=50V , VGS=10V , RG=3Ω,
---
9
---
Turn-Off Delay Time
ID=1A
---
36
---
Fall Time
---
22
---
Ciss
Input Capacitance
---
2100
---
Coss
Output Capacitance
---
255
---
Crss
Reverse Transfer Capacitance
---
100
---
Min.
Typ.
Max.
Unit
150
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
30
A
---
---
60
A
---
---
1.3
V
---
42
---
nS
---
90
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.5mH , IAS=26A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current1,6
2,6
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=15A , TJ=25℃
IF=15A,dI/dt=100A/µs,TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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