WSF70P03

WSF70P03 P-Ch MOSFET General Description Product Summery The WSF70P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 9.5mΩ -65A Applications The WSF70P03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V 1 -57 A 1 -36 A ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS 10s Steady State Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -17.8 -11.3 A 1 -14.2 -9 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Units 2 -180 A Single Pulse Avalanche Energy 408 mJ 3 IAS Avalanche Current -55.4 A PD@TC=25℃ Total Power Dissipation4 52.1 W PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 5 2 W Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Typ. Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 Max. Unit --- 62 ℃/W --- 25 ℃/W --- 2.4 ℃/W Dec.2014 WSF70P03 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ VGS=-10V , ID=-30A --- 9.5 12.5 VGS=-4.5V , ID=-15A --- 12.5 16 -1.0 -1.6 -2.5 V --- 5.04 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 26.4 --- S Qg Total Gate Charge (-4.5V) --- 33 --- Qgs Gate-Source Charge --- 10.7 --- Qgd Gate-Drain Charge --- 12.8 --- Td(on) VDS=-15V , VGS=-4.5V , ID=-15A nC --- 8 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 17.8 --- Turn-Off Delay Time ID=-15A --- 78.4 --- Fall Time --- 43.6 --- Ciss Input Capacitance --- 3448 --- Coss Output Capacitance --- 508 --- Crss Reverse Transfer Capacitance --- 421 --- Min. Typ. Max. Unit 120 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-30A Diode Characteristics Symbol Parameter Conditions 1,6 --- --- -18 A --- --- -180 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 29 --- nS Reverse Recovery Charge TJ=25℃ --- 15 --- nC IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Qrr VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t