WSF90P03

WSF90P03 P-Ch MOSFET General Description Product Summery The WSF90P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 5mΩ -85A Applications The WSF90P03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -30 V ±20 V 1 -85 A 1 -78 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -25.8 1 -23.2 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 -21.3 A -18 A -240 A 3 EAS Single Pulse Avalanche Energy 408 mJ IAS Avalanche Current -55.4 A 52.1 W PD@TC=25℃ 4 Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 5 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W --- 2.4 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSF90P03 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ VGS=-10V , ID=-30A --- 5 6 VGS=-4.5V , ID=-15A --- 6 8 -1.0 -1.6 -2.5 V --- 5.04 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 26.4 --- S Qg Total Gate Charge (-4.5V) --- 37 --- Qgs Gate-Source Charge --- 23 --- --- 14 --- Qgd VDS=-15V , VGS=-4.5V , ID=-15A Gate-Drain Charge uA nC --- 15 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 22 --- Turn-Off Delay Time ID=-15A --- 85 --- Fall Time --- 47 --- Ciss Input Capacitance --- 4448 --- Coss Output Capacitance --- 808 --- Crss Reverse Transfer Capacitance --- 521 --- Min. Typ. Max. Unit 120 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge --- --- -20 A --- --- -180 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V IF=-15A,dI/dt=100A/µs, TJ=25℃ --- 34 --- nS --- 19 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t