WSK220N04

WSK220N04 N-Ch MOSFET General Description Product Summery The WSK220N04 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 2.5mΩ 220A Applications The WSK220N04 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Switching application z Power Management for Inverter Systems. Features TO-263 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available G D S Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 208 A TC=25°C 7601,2 A TC=25°C 220 TC=100°C 139 TC=25°C 218 TC=100°C 109 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case 0.55 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS NOTE: Avalanche Energy, Single Pulsed L=0.5mH 1.41,2 J 1,Repetitive rating ; pulse width limiited by junction temperatur 2,Drain current is limited by junction temperature www.winsok.tw Page 1 Dec.2014 WSK220N04 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit 40 - - V - - 1 - - 10 Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) * Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS=0V, IDS=250µA VDS=40V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=104A - 2.5 3.2 mΩ Diode Characteristics VSD * Diode Forward Voltage ISD=104 A, VGS=0V - 0.8 1.2 V trr Reverse Recovery Time ISD=104A, dlSD/ - 36 - ns Qrr Reverse Recovery Charge dt=100A/µs - 59 - nC VGS=0V,VDS=0V,F=1MHz - 1.0 - Ω - 5710 - - 1463 - - 595 - - 34 - - 19 - Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time - 44 - Turn-off Fall Time - 61 - - 156 - - 28 - - 65 - Tf VGS=0V, VDS=25V, Frequency=1.0MHz VDD=20V, RG=6 Ω, IDS =104A, VGS=10V , pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=32V, VGS=10V, IDS=104A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Dec.2014 WSK220N04 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance 2.0 200 VGS = 10V 100 IDS = 104A 1.8 1.6 o IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.4 1.2 1.0 0.8 Tj=150 C 10 o Tj=25 C 1 0.6 o RON@Tj=25 C: 2.5mW 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 1.4 Capacitance Gate Charge 10 Frequency=1MHz VDS= 32V 9 VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) 10500 7500 Ciss 6000 4500 3000 Coss 0 0.4 Tj - Junction Temperature (°C) 12000 1500 0.2 8 16 24 32 6 5 4 3 2 0 40 0 40 80 120 160 200 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 7 1 Crss 0 IDS= 104A 8 Page 3 Dec.2014 WSK220N04 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance Output Characteristics 400 4.5 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) 350 ID - Drain Current (A) 300 5V 250 200 150 100 4.5V 50 4V 0 0.0 1.0 2.0 3.0 4.0 5.0 4.0 3.5 2.5 2.0 1.5 1.0 6.0 VGS=10V 3.0 0 50 VDS - Drain - Source Voltage (V) 100 150 Gate Threshold Voltage 7 1.6 IDS =250mA IDS=104A 6 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 250 ID - Drain Current (A) Gate-Source On Resistance 5 4 3 2 1 0 200 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSK220N04 N-Ch MOSFET Typical Characteristics Power Dissipation Drain Current 275 212 200 ID - Drain Current (A) Ptot - Power (W) 250 200 150 100 limited by package 175 150 125 100 75 50 50 o TC=25 C 0 0 o TC=25 C,VG=10V 25 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 1000 100 it im )L n s(o Rd 100us 10ms 1ms 10 DC 1 0.1 10 1 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.winsok.tw Page 5 Dec.2014 WSK220N04 N-Ch MOSFET TO-263-2L SYMBOL A MM NOM MAX MIN NOM MAX 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.22 1.27 1.32 0.048 0.050 0.052 A2 2.59 2.69 2.79 0.102 0.106 0.110 A3 0.00 0.10 0.20 0.000 0.004 0.008 b 0.77 0.813 0.90 0.030 0.032 0.035 b1 1.20 1.270 1.36 0.047 0.050 0.054 c 0.34 0.381 0.47 0.013 0.015 0.019 D1 8.60 8.70 8.80 0.339 0.343 0.346 E 10.00 10.16 10.26 0.394 0.400 0.404 E2 10.00 10.10 10.20 0.394 0.398 0.402 H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.17 1.27 1.40 0.046 0.050 0.055 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.45 1.55 1.70 0.057 0.061 0.067 2.54 BSC e L2 0.100 BSC 2.50 REF L4 www.winsok.tw INCH MIN 0.098 REF 0.25 BSC 0.010 BSC 0° 5° 8° 0° 5° 8° 1 5° 7° 9° 5° 7° 9° 2 1° 3° 5° 1° 3° 5° ΦP1 1.40 1.50 1.60 0.055 0.059 0.063 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Page 6 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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