WSP06N10

WSP06N10 N-Ch MOSFET Product Summery General Description The WSP06N10 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSP06N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 100V 85mΩ 4.5A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM EAS ±20 V 1 4.5 A 1 2.8 A 14 A 30 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy IAS Avalanche Current 5 A PD@TA=25℃ Total Power Dissipation3 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 50 ℃/W RθJC Thermal Resistance Junction-Case1 --- 25 ℃/W www.winsok.tw Typ. Page 1 Dec.2014 WSP06N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V --- 0.098 --- V/℃ --- 85 105 mΩ 135 175 mΩ 1.5 2 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=4.5A VGS=4.5V , ID=2A VGS=VDS , ID =250uA --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) --- 21 --- Qgs Gate-Source Charge --- 4.9 --- Qgd Gate-Drain Charge --- 5.8 --- VDS=50V , VGS=10V , ID=4.5A uA nC --- 13 24 Rise Time VDD=30V , VGS=10V , RG=6Ω --- 10 19 Turn-Off Delay Time ID=1A, RL=30Ω --- 32 60 Fall Time --- 16 30 Ciss Input Capacitance --- 940 --- Coss Output Capacitance --- 80 --- Crss Reverse Transfer Capacitance --- 50 --- Min. Typ. Max. Unit 25 --- --- mJ Min. Typ. Max. Unit --- --- 3 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.3mH , IAS=5A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=3A , TJ=25℃ IF=3A , dI/dt=100A/µs , TJ=25℃ --- --- 14 A --- --- 1.1 V --- 44 --- nS --- 80 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t