WSP10N10

WSP10N10 N-Ch MOSFET General Description Product Summery The WSP10N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 22mΩ 10A Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Power Management in DC/DC Converter. SOP-8 Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM ±20 V 1 10 A 1 8.2 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 60 A mJ EAS Single Pulse Avalanche Energy 42 IAS Avalanche Current 30 A 4 PD@TA=25℃ Total Power Dissipation 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 40 ℃/W --- 24 ℃/W Dec.2014 WSP10N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=10A --- 22 28 --- 25 31 1.5 2.0 2.5 V --- -5.52 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=250uA VGS=4.5V , ID=6.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.65 1.0 Ω Qg Total Gate Charge (10V) --- 28 --- Qgs Gate-Source Charge --- 9 --- Qgd Gate-Drain Charge --- 10 --- Turn-On Delay Time --- 12 --- --- 4 --- --- 17 --- Fall Time --- 5 --- Ciss Input Capacitance --- 1769 --- Coss Output Capacitance --- 164 --- Crss Reverse Transfer Capacitance --- 53 --- Min. Typ. Max. Unit --- --- mJ Min. Typ. Max. Unit --- --- 5 A --- --- 30 A --- --- 1.1 V --- 27 --- nS --- 28 --- nC Td(on) Tr Td(off) Tf VDS=80V , VGS=10V , ID=10A Rise Time VDD=30V , VGEN=10V , RG=6Ω Turn-Off Delay Time ID=1A ,RL=30Ω VDS=30V , VGS=0V , f=1MHz uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.3mH , IAS=10A 30 Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=6A , TJ=25℃ IF=10A , dI/dt=100A/µs , T= J 25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t