WSP16N10

WSP16N10 N-Ch MOSFET General Description Product Summery The WSP16N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 8.9mΩ 16A Applications The WSF16N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z DC/DC Converter SOP-8 Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V 1 16 A 1 10 A 56 A mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy L=0.1mH 30 IAS Avalanche Current 28 A 3 4 PD@TA=25℃ Total Power Dissipation 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 40 ℃/W --- 24 ℃/W Dec.2014 WSP16N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V --- 0.098 --- V/℃ --- 8.9 11 --- 9.9 13 1.4 1.7 2.5 V --- -5.52 --- mV/℃ VDS=100V , VGS=0V , TJ=25℃ --- --- 1 VDS=100V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=11.5A VGS=4.5V , ID=9.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.55 1.0 Ω Qg Total Gate Charge (10V) --- 15 --- Qgs Gate-Source Charge --- 7 --- Qgd Gate-Drain Charge --- 4 --- --- 8 --- Td(on) VDS=50V , VGS=10V , ID=11.5A Turn-On Delay Time uA nC --- 3 --- --- 25 --- Fall Time --- 4 --- Ciss Input Capacitance --- 4000 --- Coss Output Capacitance --- 898 --- Crss Reverse Transfer Capacitance --- 39 --- Min. Typ. Max. Unit --- --- mJ Min. Typ. Max. Unit --- --- 4 A --- --- 16 A --- --- 1.1 V --- 25 --- nS --- 110 --- nC Tr Td(off) Tf Rise Time VDD=50V , VGEN=10V , Turn-Off Delay Time RG=3Ω ID=1A ,RL=4.35Ω VDS=50V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=50V , L=0.1mH , IAS=10A 18 Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=6A , TJ=25℃ IF=1A , dI/dt=100A/µs , T J=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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