WSP4099

WSP4099 Dual P-Channel MOSFET Product Summery General Description The WSP4099 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -40V 30mΩ -6.5A Applications The WSP4099 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±20 V 1 -6.5 A 1 -4.5 A -22 A Single Pulse Avalanche Energy 25 mJ A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 IAS Avalanche Current -10 PD@TC=25℃ Total Power Dissipation4 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 110 ℃/W --- 50 ℃/W Dec.2014 WSP4099 Dual P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ VGS=-10V , ID=-6.5A --- 30 38 VGS=-4.5V , ID=-4.5A --- 46 62 -1.5 -2.0 -2.5 V --- 3.72 --- V/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 8 --- S Qg Total Gate Charge (-4.5V) --- 7.5 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge --- 3.5 ----- VDS=-20V , VGS=-4.5V , ID=-6.5A nC --- 8.7 Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 7 --- Turn-Off Delay Time ID=-1A ,RL=20Ω --- 31 --- Fall Time --- 17 --- Ciss Input Capacitance --- 668 --- Coss Output Capacitance --- 98 --- Crss Reverse Transfer Capacitance --- 72 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -2 --- --- -22 A --- --- -1.0 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t