WSP4406

WSP4406 N-Ch MOSFET General Description Product Summery The WSP4406 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 9.5mΩ 12A Applications The WSP4406 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features S0P-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM EAS ±20 V 1 12 A 1 10 A 40 A 25 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy IAS Avalanche Current 23 A PD@TA=25℃ Total Power Dissipation4 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 65 ℃/W --- 20 ℃/W Dec.2014 WSP4406 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ VGS=10V , ID=12A --- 9.5 12 --- 13 18 1.2 1.9 2.5 V --- -5.08 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=10A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 50 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 3 Ω Qg Total Gate Charge (4.5V) --- 6.3 --- Qgs Gate-Source Charge --- 2.9 --- Qgd Gate-Drain Charge --- 2.0 --14 VDS=15V , VGS=4.5V , ID=12A uA nC --- 8 Rise Time VDD=15V , VGS=10V , RG=6Ω --- 10 17 Turn-Off Delay Time ID=1A ,RL=15Ω --- 23 42 Fall Time --- 4.5 12 Ciss Input Capacitance --- 770 --- Coss Output Capacitance --- 130 --- Crss Reverse Transfer Capacitance --- 76 --- Min. Typ. Max. Unit 24.6 --- --- mJ Min. Typ. Max. Unit --- --- 9 A --- --- 36 A --- --- 1.1 V --- 18 --- nS --- 10 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=23A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=12A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t