WSP4409

WSP4409 P-Ch MOSFET General Description Product Summery The WSP4409 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 5.0mΩ -17.6A Applications The WSP4409 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V -17.6 A -14 A -70 A Single Pulse Avalanche Energy 72 mJ A ID@Tc=25℃ ID@Tc=70℃ IDM EAS 1 Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V 2 300uS Pulsed Drain Current 3 IAS Avalanche Current -38 PD@TA=25℃ Total Power Dissipation4 4.2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 75 ℃/W --- 24 ℃/W Dec.2014 WSP4409 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ --- 5 7.2 --- 9 12 -1.3 -1.8 -2.3 V --- 5.04 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=-10V , ID=-17.6A VGS=-4.5V , ID=-10A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 18 --- S Qg Total Gate Charge (-4.5V) --- 45 --- Qgs Gate-Source Charge Qgd VDS=-15V,VGS=-4.5V,ID=-17.6A Gate-Drain Charge --- 5 --- --- 12.7 --- uA nC --- 12 --- Rise Time VDD=-15V,VGS=-10V,RG=6Ω, --- 14 --- Turn-Off Delay Time ID=-1A ,RL=15Ω --- 98 --- Fall Time --- 60 --- Ciss Input Capacitance --- 2110 --- Coss Output Capacitance --- 450 --- Crss Reverse Transfer Capacitance --- 330 --- Min. Typ. Max. Unit 60 --- --- mJ Min. Typ. Max. Unit --- --- -4.0 A --- --- -70 A --- --- -1.1 V --- 24 --- nS --- 16 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-38A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-17.6A,dI/dt=100A/µs,TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t