WSP4410

WSP4410 N-Ch MOSFET General Description Product Summery The WSP4410 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 4mΩ 20A Applications The WSP4410 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ ±20 V 1 20 A 1 15.8 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 2 80 A IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy3 31 mJ IAS Avalanche Current 25 A 4 PD@TA=25℃ Total Power Dissipation 4.2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 65 ℃/W --- 25 ℃/W Dec.2014 WSP4410 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=20A --- 4.0 5.5 VGS=4.5V , ID=14A --- 6.0 6.8 1.3 1.8 2.5 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=12A --- 18 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.4 --- Ω --- 12.9 --- --- 4.22 --- Qg Qgs Qgd Td(on) Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=20A Gate-Source Charge Gate-Drain Charge --- 7.3 --- Turn-On Delay Time --- 14 26 uA nC Rise Time VDD=15V , VGS=10V , RG=6Ω --- 10 19 Turn-Off Delay Time ID=10A, RL=15Ω --- 44 80 Fall Time --- 12 23 Ciss Input Capacitance --- 1700 --- Coss Output Capacitance --- 265 --- Crss Reverse Transfer Capacitance --- 165 --- Min. Typ. Max. Unit --- --- mJ Min. Typ. Max. Unit --- --- 20 A --- --- 80 A --- --- 1.1 V --- 10 --- nS --- 3 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=25A 28 Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ IF=20A , dI/dt=100A/µs , T J=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t