WSP4435

WSP4435 P-Ch MOSFET General Description Product Summery The WSP4435 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 16mΩ -8.2A Applications The WSP4435 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -8.2 A 1 -6.5 A -32 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 64 mJ IAS Avalanche Current -16 A 4 PD@TA=25℃ Total Power Dissipation 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 90 ℃/W --- 50 ℃/W Dec.2014 WSP4435 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-8.2A --- 16 20 VGS=-4.5V , ID=-4A --- 25 33 -1.5 -2.0 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 11 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3 --- Ω Qg Total Gate Charge (-4.5V) --- 21 --- Qgs Gate-Source Charge --- 2.6 --- Qgd Gate-Drain Charge --- 6.2 --- VDS=-15V , VGS=-4.5V , ID=-8.2A uA nC --- 8 --- Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 12 --- Turn-Off Delay Time ID=-6A ,RL=15Ω, --- 32 --- Fall Time --- 16 --- Ciss Input Capacitance --- 1000 --- Coss Output Capacitance --- 210 --- Crss Reverse Transfer Capacitance --- 150 --- Min. Typ. Max. Unit 49 --- --- mJ Min. Typ. Max. Unit --- --- -2.0 A --- --- -32 A --- --- -1.2 V --- 16.3 --- nS --- 5.9 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-16A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-8A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t