WSP4620

WSP4620 N-Ch and P-Channel MOSFET General Description Product Summery The WSP4620 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 18mΩ 8.8A -30V 22mΩ -8.6A The WSP4620 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z CCFL Back-light Inverter z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 ±20 V 1 8.8 -8.6 A 1 6.8 -6.7 A 17.5 -17 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 72 70 mJ IAS Avalanche Current 26 -26.5 A 4 PD@TC=25℃ Total Power Dissipation 3.5 3.5 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 36 ℃/W www.winsok.tw Typ. Page 1 Dec.2014 WSP4620 N-Ch and P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=8A --- 18 24 VGS=4.5V , ID=6A --- 25 32 1.0 1.5 2.5 V --- -5.64 --- mV/℃ VDS=20V , VGS=0V , TJ=25℃ --- --- 1 VDS=20V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) --- 6 --- Qgs Gate-Source Charge --- 2.5 --- --- 2.1 --- Qgd VDS=20V , VGS=4.5V , ID=8A Gate-Drain Charge uA nC --- 2.4 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 7.8 --- Turn-Off Delay Time ID=6A --- 22 --- Fall Time --- 4 --- Ciss Input Capacitance --- 572 --- Coss Output Capacitance --- 81 --- Crss Reverse Transfer Capacitance --- 65 --- Min. Typ. Max. Unit 45 --- --- mJ Min. Typ. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- Max. 9.0 --- --- 17.5 A --- --- 1.2 V A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t