WSP4805

WSP4805 Dual P-Ch MOSFET General Description Product Summery The WSP4805 is the highest performance trench Dual P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 16mΩ -8.0A Applications The WSP4805 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -8.0 A 1 -7.1 A -40 A mJ Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 49 IAS Avalanche Current -24 A 3 4 PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 --- Max. 90 Unit ℃/W --- 20 ℃/W Dec.2014 WSP4805 Dual P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-8.0A --- 16 22 VGS=-4.5V , ID=-5.6A --- 18.5 28 -1.2 -1.4 -2.0 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 21.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.6 5.0 Ω Qg Total Gate Charge (-4.5V) --- 12 --- Qgs Gate-Source Charge --- 5.9 --- Qgd Gate-Drain Charge --- 4.7 --- VDS=-15V , VGS=-4.5V , ID=-8.9A uA nC --- 8.9 --- Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 10.8 --- Turn-Off Delay Time ID=-1A, RL=15Ω, --- 35.5 --- Fall Time --- 46.9 --- Ciss Input Capacitance --- 1025 --- Coss Output Capacitance --- 209 --- Crss Reverse Transfer Capacitance --- 158 --- Min. Typ. Max. Unit 42 --- --- mJ Min. Typ. Max. Unit --- --- -8 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-24A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 VG=VD=0V , Force Current ISM Pulsed Source Current --- --- -40 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time --- 16.5 --- nS Qrr Reverse Recovery Charge IF=-8.9A,dI/dt=100A/µs,TJ=25℃ --- 6.2 --- nC 2 Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t