WSP4807

WSP4807 Dual P-Ch MOSFET General Description Product Summery The WSP4807 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON -30V 33mΩ ID -6.5A Applications The WSP4807 meet the RoHS and Green Product requirement with full function reliability approved. · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ID@TC=25℃ ±20 V 1 -6.5 A 1 Continuous Drain Current, -VGS @ -10V ID@TC=100℃ Continuous Drain Current, -VGS @ -10V -5.3 A IDM Pulsed Drain Current2 -20 A 3 PD@TC=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 Typ. 1 Max. Unit --- 85 ℃/W --- 36 ℃/W Dec.2014 WSP4807 Dual P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage = VGS=0V , ID -250uA △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gf gfs orward Transconductance Rg Gate Resistance Qg Total Gate Charge (-4.5V) = VGS=-10V , ID -3A = VGS=-4.5V , ID -1.5A Min. Typ. Max. Unit -30 --- --- V --- V/℃ --- -0. --- 33 46 --- 53 72 --1.0 1.0 - ----- 4. --- VDS=-24V , VGS=0V , TJ=25℃ ----- - -1 VDS=-24V , VGS=0V , TJ=55℃ --- - -5 VGS=±20V , VDS=0V --- - ±100 VDS=-5V= , ID -3A --- 5 VDS=0V , VGS=0V , f=1MHz --- 24 48 --- 6.2 --- --- 2.5 --- VGS=VDS , ID =-250uA VDS=-20V , VGS=-4.5V , ID=-5A V mV/℃ uA nA S Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.3 --- Turn-On Delay Time --- 9.2 --- Td(on) mΩ Ω nC Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω --- 16.5 --- Turn-Off Delay Time ID=-1A --- 21.3 --- Fall Time --- 21.5 --- Ciss Input Capacitance --- 640 --- Coss Output Capacitance ----- 270 --- Crss Reverse Transfer Capacitance --- 103 --- Min. Typ. Max. Unit --- --- -6.5 A --- - -12 A --- - -1.2 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t