WSP4984

WSP4984 Dual N-Channel MOSFET Product Summery General Description The WSP4984 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 18mΩ 10A Applicatio The WSP4984 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z White LED boost converters z Automotive Systems zIndustrial DC/DC Conversion Circuits Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V ID@TC=70℃ IDM ±20 V 1 10 A 1 8 A 50 A Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation TA=25°C 2.0 A PD@TA=70℃ Total Power Dissipation TA=70°C 1.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 Max. Unit --- 90 ℃/W --- 40 ℃/W Notes Surface Mounted on 1” x 1” FR4 Board. a. Pulse width limited by maximum junction temperature b. www.winsok.tw Page 1 Dec.2014 WSP4984 Dual N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V VGS=10V , ID=6.6A --- 15 20 VGS=4.5V , ID=5.9A --- 17.7 21 1.55 2.2 2.7 VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ V uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V , ID=6.6A --- 50 --- S Qg Total Gate Charge (4.5V) 10 13.6 16 3.6 4.5 5.4 3.8 6.4 9 Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V , VGS=4.5V , ID=8.8A --- 6.4 --- Rise Time VDD=15V,VGEN=10V,RG=6Ω, --- 17 --- Turn-Off Delay Time ID=1A,RL=15Ω. --- 29.6 --- Fall Time --- 16.8 --- Ciss Input Capacitance --- 1500 --- Coss Output Capacitance --- 250 --- Crss Reverse Transfer Capacitance --- 135 --- Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz nC ns pF Note : 1. 2. Pulse test: PW