WSP6067
N&P-Channel MOSFET
Product Summery
General Description
The WSP6067 is the highest performance trench
N-ch and P-ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSP6067 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
BVDSS
RDSON
ID
60V
26mΩ
6.5A
-60V
60mΩ
-4.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter.
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
SOP-8 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
1
1
ID@TC=25℃
ID@TC=100℃
IDM
P-Channel
Units
60
-60
V
±20
±20
V
6.5
-4.5
A
4.5
-2.8
A
24
-16
A
N-Channel
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
EAS
Single Pulse Avalanche Energy
12
16
mJ
IAS
Avalanche Current
16
-18
A
Total Power Dissipation
3.1
3.1
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
Max.
Unit
---
90
℃/W
---
50
℃/W
PD@TC=25℃
3
4
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
www.winsok.tw
1
Thermal Resistance Junction-Case
Page 1
Dec.2014
WSP6067
N&P-Channel MOSFET
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
△VGS(th)
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
Reference to 25℃ , ID=1mA
---
0.063
---
V/℃
VGS=10V , ID=6.5A
---
26
36
VGS=4.5V , ID=3A
---
36
45
1
2
3
V
---
-5.24
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
VGS(th) Temperature Coefficient
mΩ
uA
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=8A
---
21
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3.0
4.5
Ω
Qg
Total Gate Charge (4.5V)
---
14
20
Qgs
Gate-Source Charge
---
2.6
---
Qgd
Gate-Drain Charge
---
2.2
---
VDS=48V , VGS=4.5V , ID=6.5A
nC
---
8
---
Rise Time
VDD=30V , VGS=10V , RG=6Ω,
---
6
---
Turn-Off Delay Time
ID=1A ,RL=6Ω
---
23
---
Fall Time
---
6
---
Ciss
Input Capacitance
---
670
---
Coss
Output Capacitance
---
70
---
Crss
Reverse Transfer Capacitance
---
35
---
Min.
Typ.
Max.
Unit
11.2
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
2.5
A
---
---
24
A
---
---
1.1
V
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=16A
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Conditions
1,6
Continuous Source Current
2,6
Pulsed Source Current
2
Diode Forward Voltage
VG=VD=0V , Force Current
VGS=0V , IS=1.7A,TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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