WSP8212

WSP8212 Dual N-Channel MOSFET Product Summery General Description The WSP8212 is the highest performance trench Dual N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 10mΩ 11A Applications The WSP8212 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z ESD:2KV z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@Tc=25℃ Continuous Drain Current, VGS @ 4.5V ID@Tc=70℃ IDM ±12 V 1 11 A 1 9 A 40 A Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 3 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case www.winsok.tw 1 1 Page 1 Max. Unit --- 100 ℃/W --- 70 ℃/W Dec.2014 WSP8212 Dual N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=4.5V , ID=11A --- 10 13 VGS=2.5V , ID=10A --- 12.5 15 0.5 0.72 1.0 V --- -2.33 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=±12V , VDS=0V --- --- ±100 nA VGS=VDS , ID =250uA mΩ uA gfs Forward Transconductance VDS=5V , ID=5A --- 40 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4 --- Ω Qg Total Gate Charge (4.5V) --- 4.65 6.2 Qgs Gate-Source Charge --- 1.12 --- Qgd Gate-Drain Charge --- 3.72 --- Turn-On Delay Time --- 487 975 --- 800 1600 --- 1728 3456 Fall Time --- 6180 12360 Ciss Input Capacitance --- 937 --- Coss Output Capacitance --- 153 --- Crss Reverse Transfer Capacitance --- 150 --- Td(on) Tr Td(off) Tf VDS=10V , VGS=4.5V , ID=7.5A VDD=10V , VGS=10V , RG=3.0Ω Rise Time ID=1A ,RL=10Ω. Turn-Off Delay Time VDS=10V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=11A,dI/dt=100A/µs , TJ=25℃ Min. Typ. Max. Unit --- --- 11 A --- --- 40 A --- 0.7 1.2 V --- 258 --- nS --- 182 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSP8212 Dual N-Channel MOSFET Typical Characteristics 58 20 ID=11A VGS=5V 53 16 VGS=4.5V 14 VGS=3V 48 43 RDSON (mΩ) ID Drain Current (A) 18 VGS=2.5V 12 38 10 8 33 VGS=1.8V 6 28 4 18 2 10 0 0 0.25 0.5 0.75 0 1 2 4 VDS , Drain-to-Source Voltage (V) VGS (V) 6 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 7 VDS=10V ID=11A IS Source Current(A) 6 5 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) Fig.4 Gate-Charge Characteristics 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 150 Dec.2014 WSP8212 Dual N-Channel MOSFET 1000 100.00 100us 10.00 1ms 100 ID (A) Capacitance (pF) Ciss 1.00 Coss 10ms Crss 100ms 0.10 DC o TA=25 C Single Pulse F=1.0MHz 10 0 5 10 15 20 VDS , Drain to Source Voltage (V) 0.01 0.01 Fig.7 Capacitance 0.1 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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