WSP9926A

WSP9926A Dual N-Channel MOSFET General Description Product Summery The WSP9926A is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 20mΩ 7.5A Applications The WSP9926A meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z ESD:2KV Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 7.5 A ID@TA=70℃ 1 6.0 A 30 A IDM Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 3 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw 1 Page 1 Typ. Max. Unit --- 62.5 ℃/W --- 10 ℃/W Dec.2014 WSP9926A Dual N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=4.5V , ID=7.5A --- 20 25 --- 25 35 0.5 0.7 1.1 V --- -2.33 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=2.5V , ID=5.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4.5 --- Ω Qg Total Gate Charge (4.5V) --- 10.3 15 --- 2.4 --- --- 3.2 --- Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V , VGS=4.5V , ID=7.5A uA nC --- 4.2 9.1 Rise Time VDD=10V , VGS=4.5V , RG=6Ω --- 11.2 20 Turn-Off Delay Time ID=5A ,RL=10Ω. --- 38.5 70 Fall Time --- 20.5 35 Ciss Input Capacitance --- 620 --- Coss Output Capacitance --- 110 --- Crss Reverse Transfer Capacitance --- 115 --- Min. Typ. Max. Unit --- --- 1 A --- --- 30 A --- --- 1.3 V --- 19.2 --- nS --- 4.6 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=8A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t