WSR200N08

WSR200N08 N-Ch MOSFET General Description Product Summery The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 80V 2.9mΩ 200A Applications The WSR200N08 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Switching application Power Management for Inverter Systems. Features TO-220FB-3L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge D z Excellent CdV/dt effect decline D z 100% EAS Guaranteed z Green Device Available G G S S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±25 V 1 ID@TC=25℃ Continuous Drain Current, VGS @ 10V 200 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 144 A 790 A IDM 2, Pulsed Drain Current TC=25°C EAS Avalanche Energy, Single pulse,L=0.5mH 1496 mJ IAS Avalanche Current, Single pulse,L=0.5mH PD@TC=25℃ 200 A 4 345 W 4 Total Power Dissipation PD@TC=100℃ Total Power Dissipation 173 W TSTG Storage Temperature Range -55 to 175 ℃ Operating Junction Temperature Range 175 ℃ TJ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 62.5 ℃/W --- 0.43 ℃/W Dec.2014 WSR200N08 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS=10V,ID=100A VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Min. Typ. Max. Unit 80 --- --- V --- 0.096 --- V/℃ --- 2.9 3.5 mΩ 2.0 3.0 4.0 V mV/℃ --- -5.5 --- VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 10 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω Qg Total Gate Charge (10V) --- 197 --- Qgs Gate-Source Charge --- 31 --- --- 75 --- --- 28 --- Qgd Td(on) VDS=80V , VGS=10V , ID=30A Gate-Drain Charge Turn-On Delay Time nC Rise Time VDD=50V , VGS=10V , --- 18 --- Turn-Off Delay Time RG=3Ω, ID=30A --- 42 --- Fall Time --- 54 --- Ciss Input Capacitance --- 8154 --- Coss Output Capacitance --- 1029 --- Crss Reverse Transfer Capacitance --- 650 --- Min. Typ. Max. Unit 160 --- --- mJ Min. Typ. Max. Unit --- --- 200 A --- --- 350 A --- --- 1.2 V --- 30 --- nS --- 52 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=28A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,6 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=15A , TJ=25℃ IF=15A,dI/dt=100A/µs,TJ=25℃ Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Dec.2014 WSR200N08 N-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 350 225 200 ID - Drain Current (A) Ptot - Power (W) 300 250 200 150 100 150 125 100 75 50 25 50 o o 0 limited by package 175 TC=25 C 0 20 40 0 60 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 Tc - Case Temperature (°C) 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Safe Operation Area im it 100us on )L 100 ds ( 1ms R ID - Drain Current (A) 1000 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.winsok.tw Page 2 Dec.2014 WSR200N08 N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 5.0 320 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) 280 ID - Drain Current (A) 240 5V 200 160 4.5V 120 4V 80 40 0 0.0 1.0 2.0 3.0 4.0 5.0 4.5 4.0 VGS=10V 3.5 3.0 2.5 2.0 1.5 0 6.0 50 VDS - Drain - Source Voltage (V) 100 150 200 250 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 14 1.6 IDS=100A Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 12 10 8 6 4 2 0 3 4 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw IDS =250µA 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSR200N08 N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance 2.4 2.2 2.0 Source-Drain Diode Forward 200 VGS = 10V 100 IDS = 100A o IS - Source Current (A) Normalized On Resistance 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 1 RON@Tj=25 C: 2.9mΩ 0 25 50 75 100 125 150 175 0.1 0.0 0.4 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge VDS= 64V 9 VGS - Gate-source Voltage (V) 10500 9000 Ciss 7500 6000 4500 3000 Coss 8 16 24 32 8 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw IDS= 100A 1 Crss 0 1.4 10 Frequency=1MHz 1500 0.2 Tj - Junction Temperature (°C) 12000 C - Capacitance (pF) 10 o 0.2 -50 -25 0 Tj=175 C 0 40 80 120 160 200 QG - Gate Charge (nC) Page 5 Dec.2014 WSR200N08 N-Ch MOSFET Package Information TO-220AB TO-220FB-3L SYMBOL MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.27 1.30 1.33 0.050 0.051 0.052 A2 2.35 2.40 2.50 0.093 0.094 0.098 b 0.77 0.80 0.90 0.030 0.031 0.035 b2 1.17 1.27 1.36 0.046 0.050 0.054 c 0.48 0.50 0.56 0.019 0.020 0.022 D 15.40 15.60 15.80 0.606 0.614 0.622 D1 9.00 9.10 9.20 0.354 0.358 0.362 DEP 0.05 0.10 0.20 0.002 0.004 0.008 E 9.80 10.00 10.20 0.386 0.394 0.402 E1 8.70 0.343 E2 9.80 10.00 10.20 0.386 0.394 0.402 e 2.54 BSC 0.100 BSC e1 5.08 BSC 0.200 BSC H1 6.40 6.50 6.60 0.252 0.256 0.260 L 12.75 13.50 13.65 0.502 0.531 0.537 L1 3.10 3.30 0.122 0.130 L2 2.50 REF 0.098 REF P 3.50 3.60 3.63 0.138 0.142 0.143 P1 3.50 3.60 3.63 0.138 0.142 0.143 Q 2.73 2.80 2.87 0.107 0.110 0.113 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° θ3 1° 3° 5° 1° 3° 5° www.winsok.tw Page 6 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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