WSR45P10

WSR45P10 P-Ch MOSFET General Description Product Summery The WSR45P10 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS -100V RDSON ID 44mΩ -40A Applications The WSR45P10 meet the RoHS and Green Product requirement with full function reliability approved. z Inverters TO-220AB Pin Configuration Features D z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline G z Green Device Available G D S S Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C -40 A -120** A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C -40 TC=100°C -26 TC=25°C 136 TC=100°C 68 RθJC Thermal Resistance-Junction to Case 1.1 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 308*** mJ Note： * Repetitive rating ; pulse width limiited by junction temperatur ** Drain current is limited by junction temperature *** VD=-80V www.winsok.tw Page 1 Dec.2014 WSR45P10 P-Ch MOSFET Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Min. Typ. Max. Unit VGS=0V, IDS=-250µA -100 - - V VDS=-100 V, VGS=0V - - -1 - - -10 -1 -2 -3 V Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON)* Drain-Source On-state Resistance VGS=-10V, I DS=-20 A - 44 55 mΩ RDS(ON)* Drain-Source On-state Resistance VGS=-4.5V, I DS=-20A - 47 58.5 mΩ ISD=-20A, VGS=0V - -0.8 -1.2 V - 70 - ns - 90 - nC - 2 - Ω - 5720 - - 790 - - 450 - - 30 - - 79 - - 82 - - 69 - - 125 - - 21 - - 45 - IGSS Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-20A, dlSD/dt=-100A/µ s Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-20V, Frequency=1.0MHz VDD=-50V, RG = 6 Ω, IDS =-20A, VGS=-10V, Turn-off Fall Time pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-80V,VGS=-10V, IDS=-20A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Dec.2014 WSR45P10 P-Ch MOSFET Typical Characteristics Output Characteristics Drain-Source On Resistance 60 80 VGS = -4.0,-4.5,-10V -ID - Drain Current (A) 60 RDS(ON) - On - Resistance (mΩ) 70 -3.5V 50 40 -3V 30 20 -2V 10 0 50 VGS =-4.5V 45 VGS =-10V 40 35 0 1 2 3 4 5 0 6 10 20 30 40 -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 120 100 80 60 50 40 30 0 2 4 6 8 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 12 50 IDS =-250µA IDS=-20A Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 55 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Page 3 Dec.2014 WSR45P10 P-Ch MOSFET Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 2.4 VGS =-10V 2.2 100 IDS =-20A 1.8 -IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 o Tj=175 C 10 o Tj=25 C 1 o 0.2 -50 -25 RON@Tj=25 C: 44m Ω 0 25 50 0.1 0.0 75 100 125 150 175 -0.6 -0.8 -1.0 -1.2 -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -1.4 10 Frequency=1MHz 10000 VDS= -80V 9 -VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) -0.4 Tj - Junction Temperature (°C) 11000 8000 Ciss 7000 6000 5000 4000 3000 2000 1000 0 -0.2 Coss Crss 0 5 10 15 20 25 30 35 -V DS - Drain - Source Voltage (V) www.winsok.tw 7 6 5 4 3 2 1 0 40 IDS= -20A 8 0 20 40 60 80 100 120 140 160 QG - Gate Charge (nC) Page 4 Dec.2014 WSR45P10 P-Ch MOSFET Typical Characteristics Drain Current Power Dissipation 140 -I D - Drain Current (A) 45 Ptot - Power (W) 120 100 80 60 40 40 35 30 25 20 15 10 20 5 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ds ( on )L im it 100 100us R -ID - Drain Current (A) 1000 10 1ms 10ms DC 1 o TC=25 C 0.1 0.1 1 10 100 1000 -VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration sec www.winsok.tw Page 5 Dec.2014 WSR45P10 P-Ch MOSFET Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 c D D1 DEP MIN NOM MAX MIN NOM MAX 4.40 1.27 4.57 1.30 4.70 1.33 0.173 0.050 0.180 0.051 0.185 0.052 2.35 0.77 2.40 0.80 2.50 0.90 0.093 0.030 0.094 0.031 0.098 0.035 1.17 1.27 1.36 0.046 0.050 0.054 0.48 15.40 0.50 15.60 0.56 15.80 0.019 0.606 0.020 0.614 0.022 0.622 9.00 9.10 9.20 0.354 0.358 0.362 0.05 9.80 0.10 10.00 0.20 10.20 0.002 0.386 0.004 0.394 0.008 0.402 8.70 - - 0.343 - E E1 - E2 9.80 e e1 6.40 H1 12.75 L L1 L2 P 3.50 P1 3.50 2.73 Q 5° θ1 1° θ2 1° θ3 www.winsok.tw Page 6 10.00 10.20 2.54 BSC 5.08 BSC 6.50 6.60 13.50 13.65 3.10 3.30 2.50 REF 0.386 0.252 0.502 - 0.394 0.402 0.100 BSC 0.200 BSC 0.256 0.260 0.531 0.537 0.122 0.130 0.098 REF 3.60 3.63 0.138 0.142 0.143 3.60 2.80 3.63 2.87 0.138 0.107 0.142 0.110 0.143 0.113 7° 9° 5° 7° 9° 3° 3° 5° 5° 1° 1° 3° 3° 5° 5° Dec.2014 WSR45P10 P-Ch MOSFET Package Information TO-263-2L SYMBOL MM MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.22 1.27 1.32 0.048 0.050 0.052 A2 2.59 2.69 2.79 0.102 0.106 0.110 A3 0.00 0.10 0.20 0.000 0.004 0.008 b 0.77 0.813 0.90 0.030 0.032 0.035 b1 1.20 1.270 1.36 0.047 0.050 0.054 c 0.34 0.381 0.47 0.013 0.015 0.019 D1 8.60 8.70 8.80 0.339 0.343 0.346 E 10.00 10.16 10.26 0.394 0.400 0.404 E2 10.00 10.10 10.20 0.394 0.398 0.402 2.54 BSC e 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.17 1.27 1.40 0.046 0.050 0.055 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.45 1.55 1.70 0.057 0.061 0.067 L2 2.50 REF L4 0.25 BSC 1 www.winsok.tw INCH 0.098 REF 0.010 BSC 0° 5° 8° 0° 5° 8° 5° 7° 9° 5° 7° 9° 2 1° 3° 5° 1° 3° 5° ΦP1 1.40 1.50 1.60 0.055 0.059 0.063 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Page 7 Dec.2014 WSR45P10 P-Ch MOSFET Devices Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 TO-263-2L Tube 50 Classification Profile www.winsok.tw Page 9 Dec.2014 WSR45P10 P-Ch MOSFET Classification Reflow Profiles Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness