WSR60N06

WSR60N06 N-Ch MOSFET General Description Product Summery The WSR60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low BVDSS RDSON ID 60V 12mΩ 60A gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● LED backlighting ● Uninterruptible power supply Features ● High density cell design for ultra low Rdson TO-220AB Pin Configuration ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS D ● Excellent package for good heat dissipation ● Special process technology for high ESD capability D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TJ TSTG Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 60 A 1 Continuous Drain Current, VGS @ 10V 1 41 A 120 A 290 mJ Total Power Dissipation 85 W Operating Junction Temperature Range -55 to 150 ℃ Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 62 ℃/W --- 0.57 ℃/W Dec.2014 WSR60N06 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) Max. Unit 60 --- --- V --- 0.057 --- V/℃ = VGS=10V , ID 30A --- 12 14 = VGS=4.5V , ID 20A --- 15 20 Reference to 25℃ , ID=1mA Static Drain-Source On-Resistance2 Gate Threshold Voltage Typ. = VGS=0V , ID 250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. mΩ 2.0 3.0 4.0 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA --- 30 --- S --- 1.7 3.4 Ω --- 36 45 --- 9.9 18 --- 6.6 15 --- 12 14.4 --- 5.2 10 Turn-Off Delay Time --- 38 55 Fall Time --- 27 Ciss Input Capacitance --- 2498 --- Coss Output Capacitance --- 185 --- Crss Reverse Transfer Capacitance --- 80 --- Min. Typ. Max. Unit --- --- 38 A --- --- 90 A --- --- 1.2 V △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf VGS=VDS , ID =250uA = VDS=5V , ID 15A VDS=0V , VGS=0V , f=1MHz VDS=30V , VGS=4.5V , ID=30A Turn-On Delay Time VDS=30V , VGS=10V , ID=2A ， R=1Ω. Rise Time VDS=25V , VGS=0V , f=1MHz uA nC ns 32 pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A ,dI/dt=100A/µs,TJ=25℃ --- 35 --- nS --- 47 --- nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 www.winsok.tw Page 2 Dec.2014 WSR60N06 N-Ch MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current www.winsok.tw Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Page 3 Dec.2014 WSR60N06 Power Dissipation (W) C Capacitance (pF) N-Ch MOSFET TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 9 Power De-rating ID- Drain Current (A) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 ID Current- JunctionTemperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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