WSR80N08

WSR80N08 N-Ch MOSFET General Description Product Summery The WSR80N08 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 80V 8.4mΩ 80A Applications z Power Management z DC/DC Converter z Load Switch Features z Advanced high cell density Trench technology TO-220AB Pin Configuration z Super Low Gate Charge D z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID TC = 25°Continuous Drain Current. Lead current limit. 80 A 75 A IDM IAR EAR EAS PD TJ TC = 25°C,pulse width limited by TJM TC = 25°C,Total Power Dissipation mJ 1.0 J 4 Operating Junction Temperature Range Storage Temperature Range MAX Junction Temperature Range www.winsok.tw 30 3 TC = 25°C,Single Pulse Avalanche Energy TJ RθJC A TC = 25°C,Single Pulse Avalanche Energy TJM RθJA 320 3 TC = 25°C,Avalanche Current. Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Case Page 1 230 W -55 to 175 ℃ -55 to 175 ℃ 175 ℃ 62 ℃/W 0.65 ℃/W Dec.2014 WSR80N08 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 80 --- --- V Reference to 25℃ , ID=1mA --- 0.096 --- V/℃ VGS=10V,ID=40A. --- 8.4 9.5 mΩ 2.0 --- 4.0 V mV/℃ VGS=VDS , ID =250uA --- -5.5 --- VDS=55V , VGS=0V , TJ=25℃ --- --- 50 VDS=55V , VGS=0V , TJ=85℃ --- --- 1000 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=40A 35 55 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.8 Ω Qg Total Gate Charge (10V) --- 180 --- Qgs Gate-Source Charge --- 42 --- Qgd Td(on) VDS=60V,VGS=10V,ID=40A. Gate-Drain Charge --- 75 --- Turn-On Delay Time --- 50 --- nC Rise Time VDS=60V, VGS=10V , --- 75 --- Turn-Off Delay Time RG=2.5Ω, ID=40A. --- 95 --- Fall Time --- 31 --- Ciss Input Capacitance --- 4800 --- Coss Output Capacitance --- 1670 --- Crss Reverse Transfer Capacitance --- 590 --- Min. Typ. Max. Unit Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics(TJ = 25°C, unless otherwise specified) Symbol Parameter Conditions IS Continuous Source Current VGS=0V, --- --- 80 A ISM Pulsed Source Current2,6 pulse width limited by TJM --- --- 320 A VGS=0V , IS=IF . Note2 --- --- 1.5 V --- 200 --- nS --- 500 --- nC 1,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF=25A,dI/dt=100A/µs. Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t