WSR80N10

WSR80N10 N-Ch MOSFET General Description Product Summery The WSR80N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 10mΩ 85A Applications The WSR80N10 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z Power Management in TV Converter. Features z LED TV Back Light z Advanced high cell density Trench technology TO-220AB Pin Configuration z DC-DC Converter z Super Low Gate Charge D z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 85 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 65 A 1 10 A 1 8.2 A 200 A ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 2, Pulsed Drain Current TC=25°C EAS Avalanche Energy, Single pulse,L=0.5mH 189 mJ IAS Avalanche Current, Single pulse,L=0.5mH PD@TC=25℃ 28 A 4 150 W 4 Total Power Dissipation PD@TC=100℃ Total Power Dissipation 75 W TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range 150 ℃ TJ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 50 ℃/W --- 1.1 ℃/W Dec.2014 WSR80N10 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS=10V , ID=30A VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Min. Typ. Max. Unit 100 --- --- V --- 0.096 --- V/℃ --- 10 13 mΩ 2.0 3.0 4.0 V mV/℃ --- -5.5 --- VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 27 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 1.8 Ω Qg Total Gate Charge (10V) --- 42 --- Qgs Gate-Source Charge --- 12 --- --- 12 --- --- 19 --- Qgd Td(on) VDS=80V , VGS=10V , ID=30A Gate-Drain Charge Turn-On Delay Time nC Rise Time VDD=50V , VGS=10V , RG=3Ω, --- 9 --- Turn-Off Delay Time ID=1A --- 36 --- Fall Time --- 22 --- Ciss Input Capacitance --- 2100 --- Coss Output Capacitance --- 255 --- Crss Reverse Transfer Capacitance --- 100 --- Min. Typ. Max. Unit 160 --- --- mJ Min. Typ. Max. Unit --- --- 35 A --- --- 60 A --- --- 1.3 V --- 42 --- nS --- 90 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=28A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,6 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=15A , TJ=25℃ IF=15A,dI/dt=100A/µs,TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t