WST02N10

WST02N10 N-Ch MOSFET Product Summery General Description The WST02N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 100V 180mΩ 2.0A Applications The WST02N10 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 2.0 A 1 1 A 5 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST02N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V --- 0.067 --- V/℃ VGS=10V , ID=1A --- 180 250 VGS=4.5V , ID=0.5A --- 250 320 mΩ 1.0 1.5 2.5 V --- -4.2 --- mV/℃ VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6 Ω Qg Total Gate Charge (10V) --- 9.7 13.6 Qgs Gate-Source Charge --- 1.6 2.2 Qgd Gate-Drain Charge --- 1.7 2.4 3.2 Td(on) VDS=80V , VGS=10V , ID=1A --- 1.6 Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 19 34 Turn-Off Delay Time ID=1A --- 13.6 27 Fall Time --- 19 38 Ciss Input Capacitance --- 508 --- Coss Output Capacitance --- 29 --- Crss Reverse Transfer Capacitance --- 16.4 --- Min. Typ. Max. --- --- 2.0 A --- --- 5 A --- --- 1.2 V --- 14 --- nS --- 9.3 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Unit Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t