WST02N20B

WST02N20B N-Ch MOSFET Pin Configuration Features • 200V/1.2A, RDS(ON)= 680mΩ(max.) @ VGS=10V • • • • ESD Protection 100% UIS + Rg Tested Reliable and Rugged SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) (3) D Applications (1)G • • DC-DC converter for Networking. Load switch. (2)S N-Channel MOSFET Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM a PD EAS b b °C TA=25°C 1.2 TA=25°C 1.2 TA=70°C 0.96 TA=25°C 4.8 TA=25°C 2.5 TA=70°C 1.6 t ≤ 10s 50 °C/W Steady State 90 °C/W Avalanche Current, Single pulse L=0.5mH 1 A Avalanche Energy, Single pulse L=0.5mH 0.25 mJ Pulsed Drain Current Maximum Power Dissipation RθJ A c IAS -55 to 150 V Thermal Resistance-Junction to Ambient A A A W Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25o C). Note c：Surface mounted on 1in2 pad area. www.winsok.tw Page 1 Dec.2014 WST02N20B N-Ch MOSFET Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions Min. Typ. Max. Unit V GS=0V, IDS=250µA 200 - - V V DS=160V, V GS=0V - - 1 - - 30 Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) d TJ=85°C µA Gate Threshold Voltage V DS=V GS, IDS=250µA 3 4 5 V Gate Leakage Current V GS=±25V, VDS=0V - - ±10 µA Drain-Source On-state Resistance V GS=10V, IDS=1A - 570 680 mΩ I SD =1A, VGS=0V - 0.8 1.3 V - 48 - ns - 70 - nC - 4 - Ω - 280 - - 25 - - 8.5 - - 10 18 - 8 15 - 9 17 - 2 4 - 6 9 - 2 - - 1.5 - Diode Characteristics VSD d Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics e RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(O N) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf V GS=0V,VDS=0V,f=1MHz V GS=0V, V DS=30V, Frequency=1.0MHz V DD =30V, RL =30Ω, I DS=1A, VGEN =10V, R G=6Ω Turn-off Fall Time Gate Charge Characteristics Qg I SD =1A, dl SD/dt=100A/µs pF ns e Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge V DS=100V, V GS=10V, I DS=1A nC Note d：Pulse test ; pulse width≤3 00µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WST02N20B N-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 1.4 3.0 1.2 1.0 ID - Drain Current (A) Ptot - Power (W) 2.5 2.0 1.5 1.0 0.8 0.6 0.4 0.5 0.2 o o 0.0 T A=25 C,VG=10V T A=25 C 0 20 0.0 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance 10 1 300µs 1ms 0.1 10ms 100ms 1s DC o TA=25 C 0.01 0.1 1 10 100 800 Normalized Transient Thermal Resistance s(o n) Lim it 2 Rd ID - Drain Current (A) 0 0.2 0.1 0.05 0.02 0.1 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 Mounted on 1in pad o RθJA : 50 C/W 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WST02N20B N-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 5 1400 VGS=8,9,10V 1200 RDS(ON) - On - Resistance (mΩ) 4 ID - Drain Current (A) 7V 1000 3 6.5V 2 6V 1 0 5.5V 5V 0 1 2 3 4 800 VGS=10V 600 400 200 0 5 0 1 2 3 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage IDS=1A 1200 IDS =250µA Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 5 1.4 1400 1000 800 600 400 4 5 6 7 8 9 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WST02N20B N-Ch MOSFET Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 5 3.0 VGS = 10V IDS = 1A IS - Source Current (A) Normalized On Resistance 2.5 2.0 1.5 1.0 o Tj=150 C 1 o Tj=25 C 0.5 o RON@Tj=25 C: 580m Ω 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 1.0 1.2 Gate Charge 300 Ciss 250 200 150 100 50 Coss Crss 8 16 1.4 10 VGS - Gate-source Voltage (V) C - Capacitance (pF) 0.8 Capacitance VDS =100V 9 IDS =1A 8 7 6 5 4 3 2 1 24 32 0 40 VDS - Drain-Source Voltage (V) www.winsok.tw 0.6 VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 350 0 0.2 0 1 2 3 4 5 6 QG - Gate Charge (nC) Page 5 Dec.2014 WST02N20B N-Ch MOSFET 0.25 A E1 0 A1 A2 E SOT-23-3 Package Information RECOMMENDED LAND PATTERN 0.8 2.4 0.8 0.95 UNIT: mm www.winsok.tw Page 6 Dec.2014 WST02N20B N-Ch MOSFET Classification Profile www.winsok.tw Page 7 Dec.2014 WST02N20B N-Ch MOSFET Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm