WST03P06

WST03P06 P-Channel MOSFET General Description Product Summery The WST30P06 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -60V 180 mΩ -3.5A Applications The WST30P06 meet the RoHS and Green Prod uct requirement with full function reliability appro ved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -60 V Gate-Source Voltage ±20 V 1 -3.5 A 1 -2.8 A -20 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 PD@TC=25℃ Total Power Dissipation 1.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case www.winsok.tw 1 Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST03P06 P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ --- 180 200 --- 200 250 -1.0 -1.5 -3.0 V --- 4.08 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=-10V , ID=-2A VGS=-4.5V , ID=-1A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-6A --- 5.8 --- S Qg Total Gate Charge (-4.5V) --- 6.3 --- Qgs Gate-Source Charge --- 2.3 --- Qgd Gate-Drain Charge --- 1.8 --- VDS=-20V , VGS=-4.5V , ID=-2A uA nC --- 20 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 33.1 --- Turn-Off Delay Time ID=-1A --- 34 --- Fall Time --- 3.8 --- Ciss Input Capacitance --- 364 --- Coss Output Capacitance --- 41 --- Crss Reverse Transfer Capacitance --- 12 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -3.5 A --- --- -18 A --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t