WST2011

WST2011 Dual P-Ch MOSFET Product Summery General Description The WST2011 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 80mΩ -3.2A Applications The WST2011 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-6L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ 10s Units 1 -3.6 -3.2 A 1 -2.6 -2.4 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Steady State 2 -12 3 Total Power Dissipation 3 A 1.7 1.4 W 1.2 0.9 W PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W Dec.2014 WST2011 Dual P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.011 --- V/℃ --- 80 85 --- 95 115 -0.5 -1.0 -1.5 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-2A VGS=-2.5V , ID=-1A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-2A --- 8.5 --- S Qg Total Gate Charge (-4.5V) --- 3.3 11.3 Qgs Gate-Source Charge --- 1.1 1.7 Qgd Gate-Drain Charge --- 1.1 2.9 --- 7.2 --- Td(on) VDS=-15V , VGS=-4.5V , ID=-2A Turn-On Delay Time uA nC Rise Time VDD=-15V , VGS=-4.5V , --- 9.3 --- Turn-Off Delay Time RG=3.3Ω, ID=-2A --- 15.4 --- Fall Time --- 3.6 --- Ciss Input Capacitance --- 750 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 68 --- Min. Typ. Max. Unit --- --- -1.0 A --- --- -12 A --- --- -1.1 V --- 19 --- nS --- 14 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-2A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST2011 Dual P-Ch MOSFET Typical Characteristics 100 ID=-2A RDSON (mΩ) 90 80 70 4 6 -VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics 5 -IS Source Current(A) 4 3 TJ=150℃ 2 TJ=25℃ 1 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 TJ , Junction Temperature (℃) Page 3 Dec.2014 WST2011 Dual P-Ch MOSFET Capacitance (pF) 10000 F=1.0MHz Ciss 1000 100 Coss Crss 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage(V) 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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