WST2033

WST2033 Dual P-Ch MOSFET Product Summery General Description The WST2033 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 37mΩ -4.5A Applications The WST2033 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-6L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ 10s Units 1 -5.6 -4.5 A 1 -4.6 -3.5 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Steady State 2 -14 3 Total Power Dissipation 3 A 1.5 1.1 W 1.0 0.6 W PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W Dec.2014 WST2033 Dual P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.011 --- V/℃ VGS=-4.5V , ID=-2A --- 37 51 VGS=-2.5V , ID=-1A --- 54 74 -0.5 -0.7 -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-2A --- 8.5 --- S Qg Total Gate Charge (-4.5V) --- 28 31.3 Qgs Gate-Source Charge --- 2.5 3.7 Qgd Gate-Drain Charge --- 4 5.9 --- 7 --- Td(on) Tr Td(off) Tf VDS=-15V , VGS=-4.5V , ID=-2A Turn-On Delay Time uA nC Rise Time VDD=-15V , --- 6 --- Turn-Off Delay Time VGS=-4.5V , RG=3.3Ω, --- 95 --- Fall Time ID=-1A --- 60 --- --- 1355 --- --- 225 --- --- 150 --- Min. Typ. Max. Unit --- --- -1.7 A --- --- -14 A --- --- -1.2 V --- 22 --- nS --- 16 --- nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-2A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t