WST2066

WST2066 Dual N-Ch MOSFET General Description Product Summery The WST2066 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 16mΩ 7.2A Applications The WST2066 meet the RoHS and Green Product requirement with full function reliability approved. z Power management in portable and battery operated products z One cell battery pack protection Features z ESD:2KV z Advanced high cell density Trench technology SOT-23-6L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±12 V 1 7.2 A 1 5.8 A 20 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.4 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 --- Max. 150 Unit ℃/W --- 70 ℃/W Dec.2014 WST2066 Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=4.5V , ID=6.7A --- 16 18 VGS=2.5V , ID=5.2A --- 20 25 VGS=1.8V , ID=3A --- 30 40 0.3 0.6 1.5 V --- -3.21 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=±12V , VDS=0V --- --- ±100 nA --- 8 --- S --- 4 6 Ω --- 13 17 --- 1.5 2.5 VGS=VDS , ID =250uA VDS=5V , ID=5A Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.8 2.9 Turn-On Delay Time --- 6.1 --- Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=0V , VGS=0V , f=1MHz VDS=10V , VGS=4.5V , ID=6.7A mΩ uA nC Rise Time VDD=10V , VGEN=4.5V , RG=6Ω --- 9.7 --- Turn-Off Delay Time ID=1.0A ,RL=30Ω. --- 26 --- Fall Time --- 5.2 --- Input Capacitance --- 610 --- --- 140 --- --- 130 --- Min. Typ. Max. Unit --- --- 1.0 A --- --- 20 A --- --- 1.3 V --- 18 --- nS --- 12 --- nC VDS=10V , VGS=0V , f=1MHz Output Capacitance Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , ISD=1.3A , TJ=25℃ IF=6.7A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST2066 Dual N-Ch MOSFET Typical Characteristics 50 ID=6.7A RDSON (mΩ) 40 30 20 10 1 Fig.1 Typical Output Characteristics 2 VGS3 (V) 4 5 Fig.2 On-Resistance vs. Gate-Source 6 IS Source Current(A) VDS=10V ID=6.7A 4 TJ=150℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 Fig.5 VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ Page 3 Dec.2014 WST2066 Dual N-Ch MOSFET 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 VDS Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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