WST2078

WST2078 N&P-Ch MOSFET General Description Product Summery The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2078 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDSON ID 20V 30mΩ 5.6A -20V 65mΩ -4.5A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-6L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ N-Channel P-Channel Units 20 -20 V ±12 ±12 V 1 5.6 -4.5 A 1 4 -2.6 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V 2 IDM Pulsed Drain Current 20 -13 A PD@TA=25℃ Total Power Dissipation3 1.4 1.4 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw 1 Page 1 Typ. Max. Unit --- 125 ℃/W --- 70 ℃/W Dec.2014 WST2078 N&P-Ch MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.024 --- V/℃ VGS=4.5V , ID=5A --- 30 38 VGS=2.5V , ID=4A --- 40 54 60 85 0.5 0.7 1 V --- -2.51 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=1.8V , ID=1A VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 10 --- S VDS=0V , VGS=0V , f=1MHz Ω --- 2.2 3.4 --- 9 --- --- 0.3 --- Gate-Drain Charge --- 2 --- Turn-On Delay Time --- 2.4 4.3 Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Td(on) VDS=10V , VGS=10V , ID=5A uA nC Rise Time VDD=10V , VGEN=4.5V , RG=6Ω --- 13 23 Turn-Off Delay Time ID=3A RL=10Ω --- 15.5 28 Fall Time --- 3 5.5 Ciss Input Capacitance --- 275 --- Coss Output Capacitance --- 70 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Unit Tr Td(off) Tf VDS=10V , VGS=0V , f=1MHz ns pF Drain-Source Body Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source-Drain Diode Current ISM Pulsed Diode Forward Current2,4 VSD 2 Body Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ --- --- Max. 1.0 --- --- 20 A --- --- 1.1 V --- 10.5 --- nS --- 3.2 --- nC A Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST2078 N&P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-3A --- 65 85 VGS=-2.5V , ID=-2A --- 90 120 VGS=-1.8V , ID=-1.5A --- 130 210 -0.3 -0.5 -1.0 V --- 2.3 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- 1 VDS=-16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 3.7 --- S Qg Total Gate Charge (-4.5V) --- 4.5 --- Qgs Gate-Source Charge --- 0.5 --- Qgd Gate-Drain Charge --- 1.5 --- VDS=-10V , VGS=-10V , ID=-3.3A uA nC --- 5.3 --- Rise Time VDD=-10V , VGEN=-10V , RG=6Ω --- 14.2 --- Turn-Off Delay Time ID=-1A ,RL=10Ω. --- 22 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 310 --- Coss Output Capacitance --- 66 --- Crss Reverse Transfer Capacitance --- 54 --- Min. Typ. Max. Unit --- --- -3.3 A --- --- -13 A --- --- -1.1 V --- 20 --- nS --- 6 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Drain-Source Body Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source-Drain Diode Current Pulsed Diode Forward Current 2 Body Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2,4 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3.3A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 3 Dec.2014 WST2078 N&P-Ch MOSFET N-Channel Typical Characteristics ID=5A Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 12 VDS=10V ID=5A IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.30 0.60 0.90 1.20 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 4 Dec.2014 WST2078 N&P-Ch MOSFET 1000 Capacitance (pF) F=1.0MHz Ciss 100 Coss Crss 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 5 Dec.2014 WST2078 N&P-Ch MOSFET P-Channel Typical Characteristics 165 14 ID=-3.3A VGS=-5V 140 VGS=-4.5V 10 VGS=-3V 8 RDSON (mΩ) -ID Drain Current (A) 12 115 VGS=-2.5V 6 VGS=-1.8V 90 4 65 2 40 0 0 0.5 1 1.5 1 2 2 -VDS , Drain-to-Source Voltage (V) 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 10 VDS=-10V ID=-3.3A -IS Source Current(A) 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.4 0.8 1.2 -VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature Fig.6 Normalized RDSON vs. TJ Page 6 Dec.2014 WST2078 N&P-Ch MOSFET 1000 Capacitance (pF) Ciss Coss 100 Crss F=1.0MHz 10 1 5 9 13 17 -VDS , Drain to Source Voltage (V) 21 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 7 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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