WST2333

WST2333 P-Ch MOSFET General Description Product Summery The WST2333 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -12V 23mΩ -6A Applications The WST2333 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23N Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage ±8 V -6 A ID@Tc=25℃ 1 Continuous Drain Current, VGS @ -4.5V 1 ID@Tc=70℃ Continuous Drain Current, VGS @ -4.5V IDM Pulsed Drain Current 2 -3.9 A -18.8 A 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case www.winsok.tw 1 Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST2333 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) 2 Static Drain-Source On-Resistance Min. Gate Threshold Voltage Max. Unit VGS=0V , ID=-250uA -12 --- --- V Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ VGS=-4.5V , ID=-4A --- 23 32 VGS=-2.5V , ID=-2A --- 32 40 42 52 -0.3 -0.5 -1.0 V --- 2.96 --- mV/℃ VDS=-12V , VGS=0V , TJ=25℃ --- --- -1 VDS=-12V , VGS=0V , TJ=55℃ --- --- -5 VGS=-1.8V , ID=-1.5A VGS(th) Typ. VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 21 --- S Qg Total Gate Charge (-4.5V) --- 27.3 38.2 Qgs Gate-Source Charge --- 3.6 5.0 Qgd Gate-Drain Charge --- 6.5 9.1 Turn-On Delay Time --- 9.2 18.4 Td(on) Tr Td(off) Tf Ciss VDS=-15V , VGS=-4.5V , ID=-4A uA nC Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 59 106 Turn-Off Delay Time ID=-4A --- 99 198 --- 71 142 --- 1025 --- --- 220 --- --- 187 --- Min. Typ. Max. Unit --- --- -4.7 A --- --- -18.8 A --- --- -1 V --- 52 --- nS --- 28 --- nC Fall Time Input Capacitance VDS=-12V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-4A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t