WST2339

WST2339 P-Ch MOSFET General Description Product Summery The WST2339 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON -20V 19mΩ ID -7.1A Applications The WST2339 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23N Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ID@Tc=25℃ ±12 V 1 -7.1 A 1 -6.0 A -20 A Continuous Drain Current, VGS @ -4.5V ID@Tc=70℃ Continuous Drain Current, VGS @ -4.5V IDM Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.4 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case www.winsok.tw 1 Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST2339 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ VGS=-4.5V , ID=-4A --- 17 19 VGS=-2.5V , ID=-2A --- 21 25 VGS=-1.8V , ID=-1.5A --- 30 35 -0.5 -0.5 -1.0 V --- 2.96 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 35 --- S Qg Total Gate Charge (-4.5V) --- 32 38.2 Qgs Gate-Source Charge --- 6.8 9.0 Qgd Gate-Drain Charge --- 6.9 9.1 Turn-On Delay Time --- 20 38.4 Td(on) VDS=-15V , VGS=-4.5V , ID=-4A uA nC Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 60 106 Turn-Off Delay Time ID=-4A --- 300 398 Fall Time --- 75 142 Ciss Input Capacitance --- 2000 --- Coss Output Capacitance --- 800 --- Crss Reverse Transfer Capacitance --- 620 --- Min. Typ. Max. Unit --- --- -7.1 A --- --- -40 A --- --- -1.1 V --- 22 --- nS --- 10 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-4A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t