WST2N7002

WST2N7002 N-Ch MOSFET General Description Product Summery The WST2N7002 is the highest performance trench N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 60V 2Ω 180mA Applications The WST2N7002 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC z Networking DC-DC Power System z Load Switch Features SOT-23N Pin Configuration z High-speed switching z Green Device Available z ESD Protected:2KV Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 180 mA ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 150 mA 1.2 A IDM Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 0.2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA www.winsok.tw Parameter Thermal Resistance Junction-Ambient Page 1 1 Typ. Max. Unit --- 625 ℃/W Dec.2014 WST2N7002 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ VGS=10V , ID=0.5A --- 2 6.6 --- 3 8 VGS=4.5V , ID=0.2A Ω --- 2.5 V --- mV/℃ VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA Forward Transconductance VDS=5V , ID=0.3A --- 940 --- mS --- 3 6 Drain-Source Leakage Current IGSS gfs Tf Unit -3.7 IDSS Td(off) Max. 1 VGS(th) Temperature Coefficient Tr Typ. --- Gate Threshold Voltage △VGS(th) Td(on) Min. VGS=VDS , ID =250uA Turn-On Delay Time uA Rise Time VDD=30V , VGS=10V , RG=3.3Ω, --- 1.8 3.3 Turn-Off Delay Time ID=0.5A --- 8 16 --- 6.8 13.6 --- 18 --- --- 12 --- --- 7.6 --- Min. Typ. Max. Unit --- --- 180 mA --- --- 1.2 A --- --- 1 V Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST2N7002 N-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Capacitance Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 Dec.2014 WST2N7002 N-Ch MOSFET Fig.8 Safe Operating Area Fig.10 Switching Time Waveform Fig.9 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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