WST3013

WST3013 P-Ch MOSFET General Description Product Summery The WST3031 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -12V 38mΩ -4.4A Applications The WST3031 meet the RoHS and Green Product requirement , with full function reliability approved. z Portable Equipment and Battery Powered Systems. z Power Management in Notebook Features Computer z Advanced high cell density Trench technology SOT- 23-6L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage ±8 V 1 -4.4 A 1 -3.5 A -17.7 A ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 3 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 100 ℃/W --- 80 ℃/W Dec.2014 WST3013 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -12 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ --- 38 60 --- 47 90 -0.5 -0.7 -1.0 V --- 3.95 --- mV/℃ VDS=-8V , VGS=0V , TJ=25℃ --- --- -1 VDS=-8V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-4.4A VGS=-2.5V , ID=-3.5A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 8 --- S Qg Total Gate Charge (-4.5V) --- 5.2 --- Qgs Gate-Source Charge --- 0.7 --- Qgd Gate-Drain Charge --- 1.8 --- --- 5.6 --- Td(on) VDS=-10V , VGS=-4.5V , ID=-4.4A Turn-On Delay Time uA nC Rise Time VDD=-10V , VGEN=-4.5V , --- 13.2 --- Turn-Off Delay Time RG=6Ω, ID=-1A ,RL=10Ω. --- 21 --- Fall Time --- 4.5 --- Ciss Input Capacitance --- 357 --- Coss Output Capacitance --- 72 --- Crss Reverse Transfer Capacitance --- 61 --- Min. Typ. Max. Unit --- --- -1 A --- --- -17.7 A --- --- -1 V --- 12 --- nS --- 6.6 --- nC Tr Td(off) Tf VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-4.4A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST3013 P-Ch MOSFET Typical Characteristics 100 ID=4.4A RDSON (mΩ) 80 60 40 1 Fig.1 Typical Output Characteristics 2 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. G-S Voltage 4 -IS Source Current(A) VDS=-10V ID=-4.4A 3 TJ=150℃ TJ=25℃ 2 1 0 0 0.2 0.4 0.6 0.8 -VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 -50 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Dec.2014 WST3013 P-Ch MOSFET 400 40.00 Ciss 100us 10ms -ID (A) C (pF) 10.00 Coss 60 100ms 1.00 Crss 1s 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 0.01 1 5 9 13 17 -VDS (V) 21 0.1 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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