WST3035

WST3035 P-Ch MOSFET General Description Product Summery The WST3035 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 50mΩ -4.4A Applications The WST3035 meet the RoHS and Green Product requirement , with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOT- 23-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -4.4 A 1 -3.0 A -14 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST3035 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-10V , ID=-3A --- 50 60 VGS=-4.5V , ID=-2A --- 73 90 -0.5 -1.0 -2.5 V --- 3.95 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.8 --- S Qg Total Gate Charge (-4.5V) --- 12 14.3 Qgs Gate-Source Charge --- 1.92 2.6 Qgd Gate-Drain Charge --- 3.3 4.3 Td(on) Tr Td(off) Tf VDS=-15V , VGS=-4.5V , ID=-3A uA nC --- 5.9 11.2 Rise Time VDD=-15V , --- 42 73 Turn-Off Delay Time VGS=-4.5V , RG=3.3Ω, --- 34 67 Fall Time ID=-3A --- 19 36 --- 895 --- --- 134 --- --- 120 --- Min. Typ. Max. Unit --- --- -1 A --- --- -14 A --- --- -1 V --- 23 --- nS --- 7.2 --- nC Turn-On Delay Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t