WST3078

WST3078 N&P-Ch MOSFET General Description Product Summery The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST3078 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDSON ID 30V 32mΩ 3.5A -30V 78mΩ -3A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-6L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ N-Channel P-Channel Units 30 -30 V ±20 ±20 V 1 3.5 -3 A 1 3.0 -2.4 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V 2 IDM Pulsed Drain Current 19 -12 A PD@TA=25℃ Total Power Dissipation3 1.4 1.4 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw 1 Page 1 Typ. Max. Unit --- 125 ℃/W --- 90 ℃/W Dec.2014 WST3078 N&P-Ch MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Typ. Max. Unit 30 --- --- V Reference to 25℃ , ID=1mA --- 0.025 --- V/℃ VGS=10V , ID=2.7A --- 32 50 VGS=4.5V , ID=2A --- 56 68 1.3 1.6 2.5 V --- -2.54 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=85℃ --- --- 30 = VGS=0V , ID 250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=5V , ID=2A --- 11 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω Qg Total Gate Charge (4.5V) --- 3 --- --- 1.1 --- VDS=15V , VGS=10V , ID=2A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.5 --- Turn-On Delay Time --- 5.3 8 Td(on) uA nC Rise Time VDD=10V , VGEN=4.5V , --- 11 16 Turn-Off Delay Time RG=6Ω ID=2A RL=10Ω --- 12 17 Fall Time --- 2.6 4 Ciss Input Capacitance --- 215 --- Coss Output Capacitance --- 37 --- Crss Reverse Transfer Capacitance --- 28 --- Min. Typ. Max. Unit --- --- 1.0 A --- --- 5 A --- 0.75 1.1 V --- 9.2 --- nS --- 4.3 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Drain-Source Body Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source-Drain Diode Current ISM Pulsed Diode Forward Current2,4 VSD 2 Body Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by Surface Mounted on 1in2 pad area. . 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST3078 N&P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) △VGS(th) Typ. Max. Unit -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.013 --- V/℃ VGS=-10V , ID=-2A --- 78 100 VGS=-4.5V , ID=-1.5A --- 120 170 -1.3 -1.6 -2.5 V --- 2.3 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=85℃ --- --- -30 = VGS=0V , ID -250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=-5V , ID=-2A --- 3.8 --- S Qg Total Gate Charge (-4.5V) --- 3.3 --- Qgs Gate-Source Charge --- 1.1 --- Qgd Gate-Drain Charge --- 1.1 --- Td(on) VDS=-15V , VGS=-10V , ID=-2A --- 5.3 8 Rise Time VDD=-15V , VGEN=-10V , --- 9.3 --- Turn-Off Delay Time RG=6Ω ID=-1A ,RL=15Ω. --- 15.4 --- Fall Time --- 3.6 --- Ciss Input Capacitance --- 229 --- Coss Output Capacitance --- 42 --- Crss Reverse Transfer Capacitance --- 33 --- Min. Typ. Max. Unit --- --- -3.2 A --- --- -15 A --- 0.75 -1.1 V --- 19 --- nS --- 14 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=-15V , VGS=0V , f=1MHz ns pF Drain-Source Body Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source-Drain Diode Current Pulsed Diode Forward Current 2 Body Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2,4 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-2A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 3 Dec.2014 WST3078 N&P-Ch MOSFET N-Channel Typical Characteristics Drain Current Power Dissipation 6 1.6 1.4 5 ID - Drain Current (A) Ptot - Power (W) 1.2 1.0 0.8 0.6 4 3 2 0.4 1 0.2 o TA=25 C,VG=10V o 0 20 40 0 60 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Rd s( on )L im it ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 50 10 0 Tj - Junction Temperature (°C) 300µs 1 1ms 10ms 0.1 100ms DC o TA=25 C 0.01 0.01 0.1 1 10 Normalized Transient Thermal Resistance 0.0 TA=25 C Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 2 0.01 1E-4 1E-3 100 300 VDS - Drain - Source Voltage (V) www.winsok.tw 2 Mounted on 1in pad o RθJA : 90 C/W 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Page 4 Dec.2014 WST3078 N&P-Ch MOSFET Output Characteristics Drain-Source On Resistance 16 80 VGS=5,6,7,8,9,10V 14 4.5V RDS(ON) - On - Resistance (mΩ) 70 ID - Drain Current (A) 12 10 4V 8 6 3.5V 4 2 60 VGS=4.5V 50 40 VGS=10V 30 20 3V 2.5V 0 0.0 0.5 1.0 1.5 10 2.0 2.5 3.0 0 1 3 3 Gate-Source On Resistance Gate Threshold Voltage 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 120 90 60 30 3 4 5 6 7 8 9 IDS=250µA 1.2 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 6 ID - Drain Current (A) IDS=2.7A 2 5 VDS - Drain-Source Voltage (V) 150 0 4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 5 Dec.2014 WST3078 N&P-Ch MOSFET Source-Drain Diode Forward Drain-Source On Resistance 20 1.8 VGS =10V IDS =2.7A 10 o 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 32mΩ 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS =15V 9 IDS =2A VGS - Gate - source Voltage (V) 300 C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 350 250 Ciss 200 150 100 50 Coss Crss 0 0.3 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 1 2 3 4 5 6 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 0 Page 6 Dec.2014 WST3078 N&P-Ch MOSFET P-Channel Typical Characteristics Drain Current 1.6 3.5 1.4 3.0 1.2 2.5 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.0 0.8 0.6 2.0 1.5 1.0 0.4 0.5 0.2 o o 0.0 TA=25 C,VG=-10V TA=25 C 0 20 40 0.0 80 100 120 140 160 60 0 20 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 Rd s( on )L im it 10 300µs 1 1ms 10ms 0.1 100ms DC Normalized Transient Thermal Resistance 50 -ID - Drain Current (A) 40 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 Mounted on 1in pad o RθJA : 90 C/W o TA=25 C 0.01 0.01 0.1 1 10 100 300 1E-3 1E-4 -VDS - Drain - Source Voltage (V) www.winsok.tw 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Page 7 Dec.2014 WST3078 N&P-Ch MOSFET Drain-Source On Resistance Output Characteristics 210 12 VGS=-5,-6,-7,-8,-9,-10V -4.5V RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) 10 8 -4V 6 4 -3.5V 2 180 VGS=-4.5V 150 120 VGS=-10V 90 60 -3V 0 0 1 2 3 4 30 5 0 2 2 3 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 6 1.4 IDS=-250µA IDS=-2A 240 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 5 -VDS - Drain - Source Voltage (V) 280 200 160 120 80 40 4 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 Page 8 Dec.2014 WST3078 N&P-Ch MOSFET Drain-Source On Resistance Source-Drain Diode Forward 1.8 20 VGS =-10V IDS =-2A 10 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 82mΩ 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 400 10 Frequency=1MHz -VGS - Gate-source Voltage (V) C - Capacitance (pF) 300 250 Ciss 200 150 100 0 IDS =-2A 8 7 6 5 4 3 2 Coss 50 Crss 0 VDS =-15V 9 350 1 5 10 15 20 25 0 30 1 2 3 4 5 6 7 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw 0 Page 9 Dec.2014 WST3078 N&P-Ch MOSFET Package Information SOT-23-6 D e E E1 SEE VIEW A b c 0.25 A A2 e1 L 0 A1 GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A RECOMMENDED LAND PATTERN SOT-23-6 MILLIMETERS INCHES MIN. MAX. 0.63 MIN. MAX. - 1.25 - 0.049 0.00 0.05 0.000 0.002 A2 0.90 1.20 0.035 0.047 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 A1 e 0.95 BSC e1 0.071 2.4 0.8 0.037 BSC 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.012 0° 0.024 8° 0.95 UNIT: mm Note : 1. Follow JEDEC TO-178 AB. 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. www.winsok.tw Page 10 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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