WST3392

WST3392 Dual N-Ch MOSFET General Description Product Summery The WST3392 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 30V 40mΩ 3.7A Applications The WST3392 meet the RoHS and Green Product requirement with full function reliability approved. z Power management in portable and battery operated products z One cell battery pack protection Features SOT-23-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge D1 z Excellent Cdv/dt effect decline D2 Top View z Green Device Available G1 1 S2 2 6 5 D1 S1 G2 3 4 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 3.7 A 1 3.0 A 20 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.15 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 --- Max. 110 Unit ℃/W --- 80 ℃/W Dec.2014 WST3392 Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=3.5A --- 40 50 VGS=6V , ID=2A --- 45 65 VGS=4.5V , ID=2A --- 58 73 0.5 1.5 2.0 V --- -3.21 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 VDS=30V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA --- 12 --- S --- 4 6 Ω --- 4.05 5 --- 0.55 0.8 VGS=VDS , ID =250uA VDS=5V , ID=5A Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.0 1.8 Turn-On Delay Time --- 4.5 --- Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=10V , ID=3.5A mΩ uA nC Rise Time VDD=15V , VGEN=10V , RG=3Ω --- 1.5 --- Turn-Off Delay Time ID=1.0A ,RL=4.2Ω. --- 18.5 --- Fall Time --- 15.5 --- Input Capacitance --- 170 --- --- 35 --- --- 23 --- Min. Typ. Max. Unit --- --- 1.5 A --- --- 3.5 A --- --- 1.0 V --- 7.5 --- nS --- 2.5 --- nC VDS=15V , VGS=0V , f=1MHz Output Capacitance Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , ISD=3.5A , TJ=25℃ IF=3.5A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST3392 Dual N-Ch MOSFET Typical Characteristics 15 10 VDS=5V 10V 7V 8 9 ID(A) ID (A) 12 4V 4.5V 3.5V 6 125°C 4 3 25°C 2 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 70 VGS=10V ID=3.5A 1.6 60 RDS(ON) (mΩ Ω) 6 VGS=4.5V 1.4 50 1.2 40 VGS=10V 30 VGS=4.5V ID=2A 1 17 5 2 10 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=3.5A 1.0E+01 40 125°C 80 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 100 1.0E-01 125°C 1.0E-02 60 25°C 25°C 1.0E-03 40 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) www.winsok.tw 4 0.0 Page 3 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Dec.2014 WST3392 Dual N-Ch MOSFET Typical Characteristics 300 10 VDS=15V ID=3.5A 250 Capacitance (pF) VGS (Volts) 8 Ciss 200 6 150 4 100 Coss 2 50 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 5 5 10 V (1V5olts) 20 25 DS Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs 100 ID (Amps) RDS(ON) limited 100µs 1m s 1.0 Power (W) 10.0 10 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 1 0.00001 0.0 0.01 0.1 1 VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 www.winsok.tw 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Page 4 100 1000 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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