WST3403

WST3403 P-Ch MOSFET Product Summery General Description The WST3403 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -30V 60mΩ -3.5A Applications The WST3403 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOT-23N Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ ±20 V 1 -3.5 A 1 -2.5 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V 2 IDM Pulsed Drain Current -15.5 A PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 3 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST3403 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ VGS=-4.5V , ID=-3A --- 60 75 VGS=-2.5V , ID=-2A --- 85 105 -0.5 -0.7 -1.2 V --- 2.98 --- mV/℃ VDS=-10V , VGS=0V , TJ=25℃ --- --- -1 VDS=-10V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 9 --- S Qg Total Gate Charge (-4.5V) --- 9.7 13.6 Qgs Gate-Source Charge --- 2.05 2.9 Qgd Gate-Drain Charge --- 2.43 3.4 VDS=-10V , VGS=-4.5V , ID=-3A uA nC --- 4.8 9.6 Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 9.6 17.3 Turn-Off Delay Time ID=-3A --- 52 104 Fall Time --- 8.4 16.8 Ciss Input Capacitance --- 686 --- Coss Output Capacitance --- 90.8 --- Crss Reverse Transfer Capacitance --- 80.4 --- Min. Typ. Max. Unit --- --- -3.1 A --- --- -15.5 A --- --- -1 V --- 8.4 --- nS --- 3.3 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t