WST3407

WST3407 P-Ch MOSFET Product Summery General Description The WST3407 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -30V 41mΩ -5.8A Applications The WST3407 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ ID@TC=70℃ IDM PD@TA=25℃ 10s Units 1 -6.3 -5.8 A 1 -4.5 -3.5 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Steady State 2 A -20 3 1.32 1 W 3 0.84 0.64 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W Dec.2014 WST3407 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage --- --- V --- -0.023 --- V/℃ VGS=-10V , ID=-3A --- 41 52 VGS=-4.5V , ID=-2A --- 62 90 -1.2 -1.8 -2.5 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 --- --- ±100 nA S VGS=VDS , ID =-250uA Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V gfs Forward Transconductance VDS=-5V , ID=-3A Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Tf Ciss Unit -30 IDSS Td(off) Max. VGS=0V , ID=-250uA VGS(th) Temperature Coefficient Tr Typ. Reference to 25℃ , ID=-1mA △VGS(th) Td(on) Min. --- 11 --- --- 6.4 9.0 --- 2.3 3.2 Gate-Drain Charge --- 1.9 2.7 Turn-On Delay Time --- 2.8 5.6 VDS=-15V , VGS=-4.5V , ID=-3A mΩ uA nC Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 8.4 15.1 Turn-Off Delay Time ID=-3A --- 39 78.0 --- 6 12.0 --- 583 --- --- 100 --- --- 80 --- Min. Typ. Max. Unit --- --- -2 A --- --- -20 A --- --- -1 V --- 11 --- nS --- 5.3 --- nC Fall Time Input Capacitance VDS=-15V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t