WST3414

WST3414 N-Ch MOSFET Product Summery General Description The WST3414 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 24mΩ 6.0A Applications The WST3414 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ IDM ±12 V 1 6.0 A 1 4.8 A 20 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST3414 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=4A --- 24 30 30 38 0.5 0.7 1.0 V --- -3.1 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=2.5V , ID=3A VGS=VDS , ID =250uA --- mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 8.6 12.0 Qgs Gate-Source Charge --- 1.37 1.9 Qgd Gate-Drain Charge --- 2.3 3.2 VDS=15V , VGS=4.5V , ID=4A uA nC --- 5.2 10.4 Rise Time VDS=10V , VGS=4.5V , RG=3.3Ω --- 34 61 Turn-Off Delay Time ID=4A --- 23 46 Fall Time --- 9.2 18.4 Ciss Input Capacitance --- 635 --- Coss Output Capacitance --- 70 --- Crss Reverse Transfer Capacitance --- 63 --- Min. Typ. Max. Unit --- --- 5.0 A --- --- 20 A --- --- 1.2 V --- 7.5 --- nS --- 2.1 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=4A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t